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MMBT2222AM3T5G

Public Made by Adom

by adom

onsemi Bipolar Transistors - BJT, SOT-723. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistormmbt2222am3t5gfactory-2.0.0extractor-text
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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MMBT2222AM3T5G

onsemi · Bipolar Transistors - BJT · SOT-723

MMBT2222AM3T5G from onsemi, in a SOT-723. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the NPN general purpose transistor, per the SOT-723 Style 1 pinout.
2 EMITTER passive Emitter terminal of the NPN general purpose transistor, per the SOT-723 Style 1 pinout.
3 COLLECTOR passive Collector terminal of the NPN general purpose transistor, rated VCEO 40 Vdc and IC 600 mAdc maximum per the maximum ratings.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-723
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector−Emitter Voltage VCEO 40 Vdc 1
Collector−Base Voltage VCBO 75 Vdc 1
Emitter−Base Voltage VEBO 6 Vdc 1
Collector Current − Continuous IC 600 mAdc 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Total Device Dissipation FR−5 Board (Note 1) TA = 25°C PD 265 mW TA = 25°C 1
Derate above 25°C, FR−5 Board PD 2.1 mW/°C Derate above 25°C 1
Thermal Resistance, Junction−to−Ambient, FR−5 Board RJA 470 °C/W 1
Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C PD 640 mW TA = 25°C 1
Derate above 25°C, Alumina Substrate PD 5.1 mW/°C Derate above 25°C 1
Thermal Resistance, Junction−to−Ambient, Alumina Substrate RJA 195 °C/W 1
Collector−Emitter Breakdown Voltage V(BR)CEO 40 Vdc IC = 10 mAdc, IB = 0 2
Collector−Base Breakdown Voltage V(BR)CBO 75 Vdc IC = 10 Adc, IE = 0 2
Emitter−Base Breakdown Voltage V(BR)EBO 6 Vdc IE = 10 Adc, IC = 0 2
Collector Cutoff Current ICEX 10 nAdc VCE = 60 Vdc, VEB(off) = 3.0 Vdc 2
Collector Cutoff Current ICBO 0.01 Adc VCB = 60 Vdc, IE = 0 2
Collector Cutoff Current ICBO 10 Adc VCB = 60 Vdc, IE = 0, TA = 125°C 2
Emitter Cutoff Current IEBO 100 nAdc VEB = 3.0 Vdc, IC = 0 2
Base Cutoff Current IBL 20 nAdc VCE = 60 Vdc, VEB(off) = 3.0 Vdc 2
DC Current Gain hFE 35 IC = 0.1 mAdc, VCE = 10 Vdc 2
DC Current Gain hFE 50 IC = 1.0 mAdc, VCE = 10 Vdc 2
DC Current Gain hFE 75 IC = 10 mAdc, VCE = 10 Vdc 2
DC Current Gain hFE 100 300 IC = 150 mAdc, VCE = 10 Vdc (Note 3) 2
DC Current Gain hFE 40 IC = 500 mAdc, VCE = 10 Vdc (Note 3) 2
Collector−Emitter Saturation Voltage VCE(sat) 0.3 Vdc IC = 150 mAdc, IB = 15 mAdc 2
Collector−Emitter Saturation Voltage VCE(sat) 1 Vdc IC = 500 mAdc, IB = 50 mAdc 2
Base−Emitter Saturation Voltage VBE(sat) 0.6 1.2 Vdc IC = 150 mAdc, IB = 15 mAdc 2
Base−Emitter Saturation Voltage VBE(sat) 2 Vdc IC = 500 mAdc, IB = 50 mAdc 2
Current−Gain − Bandwidth Product fT 300 MHz IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz 2
Output Capacitance Cobo 8 pF VCB = 10 Vdc, IE = 0, f = 1.0 MHz 2
Input Capacitance Cibo 25 pF VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz 2
Input Impedance hie 2 8 k IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2
Input Impedance hie 0.25 1.25 k IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2
Voltage Feedback Ratio hre 8 X 10−4 IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2
Voltage Feedback Ratio hre 4 X 10−4 IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2
Small−Signal Current Gain hfe 50 300 IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2
Small−Signal Current Gain hfe 75 375 IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2
Output Admittance hoe 5 35 mhos IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2
Output Admittance hoe 25 200 mhos IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2
Collector Base Time Constant rb, Cc 150 ps IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz 2
Noise Figure NF 4 dB IC = 100 Adc, VCE = 10 Vdc, RS = 1.0 k, f = 1.0 kHz 2
Delay Time td 10 ns VCC = 30 Vdc, VBE(off) = −0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc 2
Rise Time tr 25 ns 2
Storage Time ts 225 ns VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc 2
Fall Time tf 60 ns 2

CAD (KiCad official)

  • Symbol: MMBT2222AM3T5G
  • Footprint: Package_TO_SOT_SMD:SOT-723
  • 3D model: SOT-723 (KiCad packages3D, STEP)
  • 3D model files: mmbt2222am3t5g-etched.step / mmbt2222am3t5g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt2222am3t5g.step / mmbt2222am3t5g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (7 pp, sha256 599b82541374cbd9, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF