component
BTB12-800CW
Public Made by Adomby adom
WEIDA TRIACs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBTB12-800CW
WEIDA · TRIACs · TO-263
BTB12-800CW from WEIDA, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | T1 | passive | Main terminal 1 of the triac (T1(1) in the symbol), the reference terminal for gate triggering; the device is rated for IT(RMS) 12 A. |
| 2 | T2 | passive | Main terminal 2 of the triac (T2(2) in the symbol), marked on the TO-263 drawing at the tab; blocks VDRM/VRRM of 600/800/1200 V depending on the variant. |
| 3 | G | input | Gate terminal (G(3) in the symbol); trigger current IGT is a maximum of 35 mA for the CW grade (VD=12V, RL=33Ω) and VGT is a maximum of 1.5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WEIDA |
| Package | TO-263 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate trigger current | IGT | 35 | mA | VD=12V, RL=33Ω, quadrants I-II-III, CW | 2 | ||
| Gate trigger voltage | VGT | 1.5 | V | VD=12V, RL=33Ω, quadrants I-II-III | 2 | ||
| Gate non-trigger voltage | VGD | 0.2 | V | VD=VDRM, Tj=125℃, RL=3.3kΩ, quadrants I-II-III | 2 | ||
| Holding current | IH | 40 | mA | IT=100mA, CW | 2 | ||
| Latching current, quadrants I-III | IL | 50 | mA | IG=1.2IGT, quadrants I-III, CW | 2 | ||
| Latching current, quadrant II | IL | 60 | mA | IG=1.2IGT, quadrant II, CW | 2 | ||
| Critical rate of rise of off-state voltage | dV/dt | 500 | V/µs | VD=2/3VDRM, Tj=125℃, gate open, CW | 2 | ||
| On-state voltage | VTM | 1.5 | V | ITM=17A, tp=380μs, Tj=25℃ | 3 | ||
| Off-state/reverse leakage current | IDRM/IRRM | 5 | µA | VDRM=VRRM, Tj=25℃ | 3 | ||
| Off-state/reverse leakage current | IDRM/IRRM | 1 | mA | VDRM=VRRM, Tj=125℃ | 3 | ||
| Thermal resistance junction to case (AC) | Rth(j-c) | 1.5 | ℃/W | TO-263 | 3 | ||
| Repetitive peak off-state voltage | VDRM | 800 | V | Tj=25℃ | 1 | ||
| Repetitive peak reverse voltage | VRRM | 800 | V | Tj=25℃ | 1 | ||
| RMS on-state current | IT(RMS) | 12 | A | 1 | |||
| Non repetitive surge peak on-state current | ITSM | 120 | A | full cycle, F=50Hz | 1 | ||
| I2t value for fusing | I2t | 78 | A2s | tp=10ms | 1 | ||
| Critical rate of rise of on-state current | dI/dt | 50 | A/μs | IG=2×IGT | 1 | ||
| Peak gate current | IGM | 4 | A | 1 | |||
| Average gate power dissipation | PG(AV) | 1 | W | 1 | |||
| Peak gate power | PGM | 5 | W | 1 | |||
| Storage junction temperature range | Tstg | -40 | 150 | ℃ | 1 | ||
| Operating junction temperature range | Tj | -40 | 125 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
BTB12-800CW - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
btb12-800cw-etched.step/btb12-800cw-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);btb12-800cw.step/btb12-800cw.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WEIDA datasheet (7 pp, sha256
464a37ab52cf58d7, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).