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SM6362D1RL
Public Made by Adomby adom
SPS MOSFETs, DFN-8-EP(6.1x5.2). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSM6362D1RL
SPS · MOSFETs · DFN-8-EP(6.1x5.2)
SM6362D1RL from SPS, in a DFN-8-EP(6.1x5.2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET (pin 1, marked by the dot on the top view). |
| 2 | S | passive | Source of the N-channel MOSFET. |
| 3 | S | passive | Source of the N-channel MOSFET. |
| 4 | G | input | Gate of the N-channel MOSFET; VGS maximum is ±20V and threshold VGS(th) is 1.1V min to 2.2V max at ID=250µA. |
| 5 | D | passive | Drain of the MOSFET; VDS maximum is 30V and continuous ID is 60A at TA=25°C. |
| 6 | D | passive | Drain of the MOSFET, connected in common with the other drain pins. |
| 7 | D | passive | Drain of the MOSFET, connected in common with the other drain pins. |
| 8 | D | passive | Drain of the MOSFET, connected in common with the other drain pins. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SPS |
| Package | DFN-8-EP(6.1x5.2) |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 60 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | 39 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | 96 | A | 1 | |||
| Avalanche Current | IAR | 19.2 | A | 1 | |||
| Repetitive avalanche energy | EAR | 44.2 | mJ | L=0.1mH | 1 | ||
| Power Dissipation | PD | 31 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 13 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RθJA | 21 | 32 | °C/W | t ≤ 10s | 1 | |
| Maximum Junction-to-Ambient | RθJA | 43 | 51 | °C/W | Steady State | 1 | |
| Maximum Junction-to-Lead | RθJL | 12 | 20 | °C/W | Steady State | 1 | |
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | ID = -250uA, VGS = 0V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1.1 | 1.7 | 2.2 | V | VDS = VGS ID = 250µA | 2 |
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | 5 | uA | VDS=30V, VGS=0V | 2 | |
| Forward Transconductance | gFS | 75 | S | VDS=5V, ID=20A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 6 | 8.6 | mΩ | VGS=10V, ID=20A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 9.5 | 12.3 | mΩ | VGS=4.5V, ID=20A | 2 | |
| Diode Forward Voltage | VSD | 0.72 | 1 | V | IS=1A,VGS=190V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 60 | A | 2 | |||
| Input Capacitance | Ciss | 820 | 1000 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | |
| Output Capacitance | Coss | 340 | 418 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 40 | 47 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | |
| Gate resistance | Rg | 1.2 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 | ||
| Total Gate Charge (10V) | Qg (10V) | 6.1 | nC | VGS=10V, VDS=15V, ID=20A | 2 | ||
| Total Gate Charge (4.5V) | Qg (4.5V) | 3.05 | nC | 2 | |||
| Gate Source Charge | Qgs | 1.68 | nC | 2 | |||
| Gate Drain Charge | Qgd | 2.4 | nC | 2 | |||
| Turn-On Delay Time | tD(on) | 5.5 | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Turn-On Rise Time | tr | 4.4 | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Turn-Off Delay Time | tD(off) | 15.4 | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 4.95 | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Body Diode Reverse Recovery Time | trr | 11 | ns | IF=-8A, dI/dt=500A/µs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 19 | nC | IF=18A, dI/dt=500A/µs | 2 |
CAD (KiCad official)
- Symbol:
SM6362D1RL - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8-EP(6.1x5.2) (KiCad packages3D, STEP)
- 3D model files:
sm6362d1rl-etched.step/sm6362d1rl-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sm6362d1rl.step/sm6362d1rl.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SPS datasheet (4 pp, sha256
948193a4729033db, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).