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Contents

README

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PMBT2907A-QR

Nexperia · Bipolar (BJT) · TO-236AB

PMBT2907A-QR from Nexperia, in a TO-236AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the PNP transistor; VEBO (emitter-base voltage, open collector) is limited to -5 V and peak base current IBM to -200 mA (single pulse, tp ≤ 1 ms).
2 E passive Emitter of the PNP transistor; the emitter-base capacitance is at most 30 pF at VEB = -2 V.
3 C passive Collector of the PNP transistor; VCEO is -60 V (open base), VCBO is -60 V, and IC is rated at -600 mA continuous and -800 mA peak.

Key specifications

Parameter Value
Manufacturer Nexperia
Package TO-236AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO -60 V open emitter 2
Collector-emitter voltage VCEO -60 V open base 2
Emitter-base voltage VEBO -5 V open collector 2
Collector current IC -600 mA 2
Peak collector current ICM -800 mA 2
Peak base current IBM -200 mA single pulse; tp ≤ 1 ms 2
Total power dissipation Ptot 250 mW Tamb ≤ 25 °C [1] 2
Junction temperature Tj 150 °C 2
Ambient temperature Tamb -65 150 °C 2
Storage temperature Tstg -65 150 °C 2
Thermal resistance from junction to ambient Rth(j-a) 500 K/W in free air [1] 3
Collector-base cut-off current ICBO -10 nA VCB = -50 V; IE = 0 A; Tamb = 25 °C 4
Collector-base cut-off current ICBO -10 µA VCB = -50 V; IE = 0 A; Tj = 125 °C 4
Emitter-base cut-off current IEBO -50 nA VEB = -5 V; IC = 0 A; Tamb = 25 °C 4
DC current gain hFE 75 VCE = -10 V; IC = -0.1 mA; Tamb = 25 °C 4
DC current gain hFE 100 VCE = -10 V; IC = -1 mA; Tamb = 25 °C 4
DC current gain hFE 100 300 VCE = -10 V; IC = -150 mA; Tamb = 25 °C 4
DC current gain hFE 50 VCE = -10 V; IC = -500 mA; Tamb = 25 °C 4
Collector-emitter saturation voltage VCEsat -400 mV IC = -150 mA; IB = -15 mA; Tamb = 25 °C 4
Collector-emitter saturation voltage VCEsat -1.6 V IC = -500 mA; IB = -50 mA; Tamb = 25 °C 4
Base-emitter saturation voltage VBEsat -1.3 V IC = -150 mA; IB = -15 mA; Tamb = 25 °C 4
Base-emitter saturation voltage VBEsat -2.6 V IC = -500 mA; IB = -50 mA; Tamb = 25 °C 4
Delay time td 12 ns 4
Rise time tr 30 ns 4
Turn-on time ton 40 ns 4
Storage time ts 300 ns 4
Fall time tf 65 ns 4
Turn-off time toff 365 ns IC = -150 mA; IBon = -15 mA; IBoff = 15 mA; Tamb = 25 °C 4
Collector capacitance Cc 8 pF VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C 4
Emitter capacitance Ce 30 pF VEB = -2 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 °C 4
Transition frequency fT 200 MHz VCE = -20 V; IC = -50 mA; f = 100 MHz; Tamb = 25 °C 4

CAD (KiCad official)

  • Symbol: PMBT2907A-QR
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: TO-236AB (KiCad packages3D, STEP)
  • 3D model files: pmbt2907a-qr-etched.step / pmbt2907a-qr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pmbt2907a-qr.step / pmbt2907a-qr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (11 pp, sha256 640d112c47354a48, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF