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Contents

README

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MMBT5401T

CBI · Bipolar (BJT) · SOT-523

MMBT5401T from CBI, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP transistor; the datasheet gives no pin-specific limit, only device maximum ratings such as VEBO -5 V and IC -600 mA.
2 EMITTER passive Emitter terminal of the PNP transistor; the datasheet gives no pin-specific limit, only device maximum ratings such as VEBO -5 V and VCEO -150 V.
3 COLLECTOR passive Collector terminal of the PNP transistor; the datasheet gives no pin-specific limit, with maximum VCBO -160 V, VCEO -150 V and IC -600 mA for the device.

Key specifications

Parameter Value
Manufacturer CBI
Package SOT-523
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO -160 V 1
Collector-emitter voltage VCEO -150 V 1
Emitter-base voltage VEBO -5 V 1
Collector current IC -600 mA 1
Collector power dissipation PC 200 mW 1
Junction temperature Tj 150 ℃ 1
Storage temperature Tstg -55 150 ℃ 1
Collector-base breakdown voltage V(BR)CBO -160 V IC=-100µA, IE=0 1
Collector-emitter breakdown voltage V(BR)CEO -150 V IC=-1mA, IB=0 1
Emitter-base breakdown voltage V(BR)EBO -5 V IE=-10µA, IC=0 1
Collector cut-off current ICBO -50 nA VCB=-120V, IE=0 1
Emitter cut-off current IEBO -50 nA VEB=-3V, IC=0 1
DC current gain hFE 60 300 VCE=-5V, IC=-10mA 1
DC current gain hFE 50 VCE=-5V, IC=-1mA 1
Collector-emitter saturation voltage VCE(sat) -0.5 V IC=-50mA, IB=-5mA 1
Collector-emitter saturation voltage VCE(sat) -0.2 V IC=-10mA, IB=-1mA 1
Base-emitter saturation voltage VBE(sat) -1 V IC=-50mA, IB=-5mA 1
Transition frequency fT 100 MHz VCE=-10V, IC=-10mA, f=100MHz 1
Collector output capacitance Cob 6 pF VCB=-10V, IE=0, f=1MHz 1
Thermal resistance, junction to ambient RθJA 625 ℃/W 1

CAD (KiCad official)

  • Symbol: MMBT5401T
  • Footprint: Package_TO_SOT_SMD:SOT-523
  • 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: mmbt5401t-etched.step / mmbt5401t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt5401t.step / mmbt5401t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: CBI datasheet (3 pp, sha256 7a64a3b144b492ad, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF