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Contents

README

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FS4447

FOSAN · MOSFETs · SOP-8

FS4447 from FOSAN, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, tied with pins 2 and 3; drain-source voltage rating is -30 V.
2 S passive Source of the P-channel MOSFET, tied with pins 1 and 3; drain-source voltage rating is -30 V.
3 S passive Source of the P-channel MOSFET, tied with pins 1 and 2; drain-source voltage rating is -30 V.
4 G input Gate of the P-channel MOSFET with a gate-source voltage rating of ±20 V and threshold of -1 V to -2 V at ID = -250uA.
5 D passive Drain of the P-channel MOSFET, tied with pins 6, 7 and 8; continuous drain current is -16 A at TA = 25°C.
6 D passive Drain of the P-channel MOSFET, tied with pins 5, 7 and 8; continuous drain current is -16 A at TA = 25°C.
7 D passive Drain of the P-channel MOSFET, tied with pins 5, 6 and 8; continuous drain current is -16 A at TA = 25°C.
8 D passive Drain of the P-channel MOSFET, tied with pins 5, 6 and 7; continuous drain current is -16 A at TA = 25°C.

Key specifications

Parameter Value
Manufacturer FOSAN
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage BVDSS -30 V 1
Gate-Source Voltage VGS 20 V 1
Drain Current (continuous) ID -16 A TA = 25°C 1
Drain Current (pulsed) IDM -40 A 1
Total Device Dissipation PTOT 2 W TA = 25°C 1
Junction/Storage Temperature TJ,Tstg -55 150 °C 1
Thermal Resistance Junction-Ambient RΘJA 62 ℃/W 1
Drain-Source Breakdown Voltage BVDSS -30 V ID = -250uA, VGS=0V 2
Gate Threshold Voltage VGS(th) -1 -1.4 -2 V ID = -250uA, VGS= VDS 2
Zero Gate Voltage Drain Current IDSS -1 uA VGS=0V, VDS= -30V 2
Gate Body Leakage IGSS 100 nA VGS=+25V, VDS=0V 2
Static Drain-Source On-State Resistance RDS(ON) 7.5 8 mΩ ID= -15A, VGS= -10V 2
Static Drain-Source On-State Resistance RDS(ON) 9.5 13 mΩ ID= -8A, VGS= -4.5V 2
Diode Forward Voltage Drop VSD -0.75 -1 V ISD= -2.3A, VGS=0V 2
Input Capacitance CISS 3050 pF VGS=0V, VDS= -15V, f=1MHz 2
Common Source Output Capacitance COSS 506 pF VGS=0V, VDS= -15V, f=1MHz 2
Reverse Transfer Capacitance CRSS 420 pF VGS=0V, VDS= -15V, f=1MHz 2
Total Gate Charge Qg 30 nC VDS= -15V, ID= -10A, VGS= -4.5V 2
Gate Source Charge Qgs 10 nC VDS= -15V, ID= -10A, VGS= -4.5V 2
Gate Drain Charge Qgd 10 nC VDS= -15V, ID= -10A, VGS= -4.5V 2
Turn-ON Delay Time td(on) 9 ns VDS= -15V ID= -10A, RGEN=3Ω, VGS= -10V 2
Turn-ON Rise Time tr 10 ns VDS= -15V ID= -10A, RGEN=3Ω, VGS= -10V 2
Turn-OFF Delay Time td(off) 120 ns VDS= -15V ID= -10A, RGEN=3Ω, VGS= -10V 2
Turn-OFF Fall Time tf 25 ns VDS= -15V ID= -10A, RGEN=3Ω, VGS= -10V 2

CAD (KiCad official)

  • Symbol: FS4447
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: fs4447-etched.step / fs4447-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fs4447.step / fs4447.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: FOSAN datasheet (5 pp, sha256 d4d78aaa818e6e0b, retrieved 2026-10-17, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF