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Contents

README

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KNB2706A

KIA Semicon Tech · MOSFETs · TO-263

KNB2706A from KIA Semicon Tech, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET; VGS maximum ±20 V, threshold 2.2 to 3.6 V.
2 Drain passive Drain terminal; VDSS 60 V, continuous drain current 150 A at TC=25°C, pulsed 450 A.
3 Source passive Source terminal of the N-channel MOSFET; continuous body-diode forward current 150 A.

Key specifications

Parameter Value
Manufacturer KIA Semicon Tech
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage BVDSS 60 V VGS=0V,ID=250uA 3
Drain-source leakage current IDSS 1 uA VDS=60V, VGS=0V 3
Drain-source leakage current IDSS 10 uA VDS=48V, TC=150°C 3
Gate-source forward leakage IGSS -100 100 nA VGS=±20V, VDS=0V 3
Gate threshold voltage VGS(TH) 2.2 3.6 V VDS=VGS,ID=250uA 3
Drain-source on-resistance RDS(on) 2.8 3.6 mΩ VGS=10V,ID=20A 3
Maximum Continuous Drain-Source Diode Forward Current IS 150 A 3
Maximum Pulsed Drain-Source Diode Forward Current ISM 450 A 3
Diode forward voltage VSD 1.2 V IS=50A,VGS=0V 3
Drain-source voltage VDSS 60 V TC=25°C 2
Continuous drain current ID 150 A TC=25°C 2
Continuous drain current ID 98 A TC=100°C 2
Pulsed drain current IDM 450 A TC=25°C 2
Gate-source voltage VGS -20 20 V TC=25°C 2
Single pulse avalanche energy EAS 552 mJ IAS=ID, VDD=20V, RG=25Ω, Starting TJ=25°C 2
Repetitive Avalanche Energy EAR 240 mJ TC=25°C 2
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns TC=25°C 2
Power dissipation PD 238 W TC=25°C, TO-263 2
Operating junction and storage temperature range TJ,TSTG -55 150 ºC 2
Maximum lead temperature for soldering TL 300 ºC 1/8" from case for 5 seconds 2
Thermal resistance junction-case RθJC 0.53 ºC/W TO-263 2
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ 0.06 V/°C ID=250uA, Referenced to 25°C 3
Input capacitance Ciss 8850 pF VDS=25V,VGS=0V, f=1MHz 3
Output capacitance Coss 610 pF VDS=25V,VGS=0V, f=1MHz 3
Reverse transfer capacitance Crss 730 pF VDS=25V,VGS=0V, f=1MHz 3
Turn-on delay time td(on) 20 ns VDD=30V, RG=25Ω, ID=50A 3
Rise time tr 38 ns VDD=30V, RG=25Ω, ID=50A 3
Turn-off delay time td(off) 49 ns VDD=30V, RG=25Ω, ID=50A 3
Fall time tf 30 ns VDD=30V, RG=25Ω, ID=50A 3
Total gate charge(10V) Qg 200 nC VDS=30V, ID=50A, VGS=10V 3
Gate-source charge Qgs 35 nC VDS=30V, ID=50A, VGS=10V 3
Gate-drain charge Qgd 72 nC VDS=30V, ID=50A, VGS=10V 3
Reverse Recovery Time trr 62 nS VGS=0V,IS=50A, dIF/dt=100A/μs 3
Reverse Recovery Charge Qrr 105 nC VGS=0V,IS=50A, dIF/dt=100A/μs 3

CAD (KiCad official)

  • Symbol: KNB2706A
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: knb2706a-etched.step / knb2706a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); knb2706a.step / knb2706a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: KIA Semicon Tech datasheet (8 pp, sha256 ef2a8b72a528ac7b, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF