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Contents

README

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STN1810

STANSON Tech · MOSFETs · SOP-8

STN1810 from STANSON Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, tied internally with pins 2 and 3.
2 S passive Source of the N-channel MOSFET, tied internally with pins 1 and 3.
3 S passive Source of the N-channel MOSFET, tied internally with pins 1 and 2.
4 G input Gate of the N-channel MOSFET; VGSS rating is ±20 V.
5 D passive Drain of the MOSFET, tied internally with pins 6, 7 and 8; VDSS is 100 V.
6 D passive Drain of the MOSFET, tied internally with pins 5, 7 and 8; continuous drain current is 8.0 A at TA=25℃.
7 D passive Drain of the MOSFET, tied internally with pins 5, 6 and 8; pulsed drain current is 12 A.
8 D passive Drain of the MOSFET, tied internally with pins 5, 6 and 7; VDSS is 100 V.

Key specifications

Parameter Value
Manufacturer STANSON Tech
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 100 V 2
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current ID 8 A TJ=150℃; TA=25℃ 2
Continuous Drain Current ID 6 A TJ=150℃; TA=70℃ 2
Pulsed Drain Current IDM 12 A 2
Continuous Source Current (Diode Conduction) IS 2.3 A 2
Power Dissipation PD 2.8 W TA=25℃ 2
Power Dissipation PD 1.8 W TA=70℃ 2
Operation Junction Temperature TJ 150 ℃ 2
Storage Temperature Range TSTG -55 150 ℃ 2
Thermal Resistance-Junction to Ambient RθJA 80 ℃/W 2
Drain-Source Breakdown Voltage V(BR)DSS 100 V VGS=0V,ID=250uA 3
Gate Threshold Voltage VGS(th) 1 3 V VDS=VGS,ID=250uA 3
Gate Leakage Current IGSS -100 100 nA VDS=0V,VGS=±20V 3
Zero Gate Voltage Drain Current IDSS 250 uA VDS=80V,VGS=0V 3
Zero Gate Voltage Drain Current IDSS 5 uA VDS=80V,VGS=0V, TJ=5℃ 3
On-State Drain Current ID(on) 8 A VDS≧5V,VGS=10V 3
Drain-source On-Resistance RDS(on) 140 155 mΩ VGS=10V,ID=10A 3
Drain-source On-Resistance RDS(on) 150 170 mΩ VGS=7.0V,ID=6.5A 3
Diode Forward Voltage VSD 1.3 V IS=1A,VGS=0V 3
Forward Transconductance gfs 5.6 S VDS=5V,ID=6.2AV 3
Total Gate Charge Qg 20 nC VDS=80V,VGS=5V, ID=5A 3
Gate-Source Charge Qgs 3.5 nC VDS=80V,VGS=5V, ID=5A 3
Gate-Drain Charge Qgd 5.2 nC VDS=80V,VGS=5V, ID=5A 3
Input Capacitance Ciss 630 pF VDS=25V,VGS=0V, F=1MHz 3
Output Capacitance Coss 68 pF VDS=25V,VGS=0V, F=1MHz 3
Reverse Transfer Capacitance Crss 43 pF VDS=25V,VGS=0V, F=1MHz 3
Turn-On Delay Time td(on) 6.5 nS VDD=50V,RD=10Ω; VDS=30V,RG=3.3Ω; ID≡5A 3
Turn-On Rise Time tr 10 nS VDD=50V,RD=10Ω; VDS=30V,RG=3.3Ω; ID≡5A 3
Turn-Off Delay Time td(off) 13 nS VDD=50V,RD=10Ω; VDS=30V,RG=3.3Ω; ID≡5A 3
Turn-Off Fall Time tf 3.4 nS VDD=50V,RD=10Ω; VDS=30V,RG=3.3Ω; ID≡5A 3

CAD (KiCad official)

  • Symbol: STN1810
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: stn1810-etched.step / stn1810-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stn1810.step / stn1810.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STANSON Tech datasheet (7 pp, sha256 2fcccdf3d0cf5637, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF