component
MJE13006-HXY
Public Made by Adomby adom
HXY MOSFET Bipolar (BJT), TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMJE13006-HXY
HXY MOSFET · Bipolar (BJT) · TO-220
MJE13006-HXY from HXY MOSFET, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor; drive current IB (e.g. 0.4 A for IC=2 A, 1 A for IC=5 A, 2 A for IC=8 A in the saturation tests) turns the device on, with VEBO limited to 9 V. |
| 2 | COLLECTOR | passive | Collector terminal, rated VCBO 700 V, VCEO 400 V and IC 8 A maximum. |
| 3 | EMITTER | passive | Emitter terminal of the NPN transistor, the common return for base drive and collector current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 700 | V | IC=1mA, IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 400 | V | IC=10mA, IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 9 | V | IE=1mA, IC=0 | 1 | ||
| Collector cut-off current | ICBO | 100 | μA | VCB=700V, IE=0 | 1 | ||
| Emitter cut-off current | IEBO | 100 | μA | VEB=9V, IC=0 | 1 | ||
| DC current gain | hFE(1) | 10 | VCE=5V, IC=2A | 1 | |||
| DC current gain | hFE(2) | 5 | VCE=5V, IC=8A | 1 | |||
| Collector-emitter saturation voltage | VCE(sat)1 | 1 | V | IC=2A, IB=0.4A | 1 | ||
| Collector-emitter saturation voltage | VCE(sat)2 | 2 | V | IC=5A, IB=1A | 1 | ||
| Collector-emitter saturation voltage | VCE(sat)3 | 3 | V | IC=8A, IB=2A | 1 | ||
| Base-emitter saturation voltage | VBE(sat)1 | 1.2 | V | IC=2A, IB=0.4A | 1 | ||
| Base-emitter saturation voltage | VBE(sat)2 | 1.6 | V | IC=5A, IB=1A | 1 | ||
| Storage time | tS | 3 | 6 | μs | IC=500mA (UI9600) | 1 | |
| Fall time | tf | 0.5 | μs | IC=500mA (UI9600) | 1 | ||
| Transition frequency | fT | 4 | MHz | VCE=10V, IC=0.5A, f=1MHz | 1 | ||
| Collector-Base Voltage | VCBO | 700 | V | Ta=25°C | 1 | ||
| Collector-Emitter Voltage | VCEO | 400 | V | Ta=25°C | 1 | ||
| Emitter-Base Voltage | VEBO | 9 | V | Ta=25°C | 1 | ||
| Collector Current | IC | 8 | A | Ta=25°C | 1 | ||
| Collector Power Dissipation | PC | 2 | W | Ta=25°C | 1 | ||
| Collector Power Dissipation | PC | 80 | W | TC=25°C | 1 | ||
| Operation Junction and Storage Temperature Range | Tj,Tstg | -55 | 150 | °C | 1 | ||
| Thermal Resistance from Junction to Case | RθJC | 1.56 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
MJE13006-HXY - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
mje13006-hxy-etched.step/mje13006-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mje13006-hxy.step/mje13006-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
bd3e48412182836e, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).