component
STL50DN6F7
Public Made by Adomby adom
STMicroelectronics Global Sourcing Parts, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSTL50DN6F7
STMicroelectronics · Global Sourcing Parts · DFN-8(5x6)
STL50DN6F7 from STMicroelectronics, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S2 | passive | Source terminal of MOSFET 2 (second channel); forms the drain-source path rated VDS = 60 V max with ID = 57 A continuous at TC = 25 °C (41 A at TC = 100 °C). |
| 2 | G2 | input | Gate terminal of MOSFET 2 (second channel); gate-source voltage rated VGS = ±20 V max, gate threshold voltage VGS(th) = 2 to 4 V. |
| 3 | S1 | passive | Source terminal of MOSFET 1 (first channel); forms the drain-source path rated VDS = 60 V max with ID = 57 A continuous at TC = 25 °C (41 A at TC = 100 °C). |
| 4 | G1 | input | Gate terminal of MOSFET 1 (first channel); gate-source voltage rated VGS = ±20 V max, gate threshold voltage VGS(th) = 2 to 4 V. |
| 5 | D1 | passive | Drain terminal of MOSFET 1 (first channel), internally connected to its rear-side island pad; rated VDS = 60 V max, continuous ID = 57 A at TC = 25 °C (41 A at TC = 100 °C), pulsed IDM = 228 A. |
| 6 | D1 | passive | Drain terminal of MOSFET 1 (first channel), internally connected to its rear-side island pad; rated VDS = 60 V max, continuous ID = 57 A at TC = 25 °C (41 A at TC = 100 °C), pulsed IDM = 228 A. |
| 7 | D2 | passive | Drain terminal of MOSFET 2 (second channel), internally connected to its rear-side island pad; rated VDS = 60 V max, continuous ID = 57 A at TC = 25 °C (41 A at TC = 100 °C), pulsed IDM = 228 A. |
| 8 | D2 | passive | Drain terminal of MOSFET 2 (second channel), internally connected to its rear-side island pad; rated VDS = 60 V max, continuous ID = 57 A at TC = 25 °C (41 A at TC = 100 °C), pulsed IDM = 228 A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | DFN-8(5x6) |
| Category | Global Sourcing Parts |
| Pins | 9 |
CAD (KiCad official)
- Symbol:
STL50DN6F7 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
stl50dn6f7-etched.step/stl50dn6f7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stl50dn6f7.step/stl50dn6f7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (15 pp, sha256
50f762f95669460c, retrieved 2026-09-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.2, primaryclaude-sonnet-5(text+vision), consensusclaude-opus-4-8(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).