component
HSU6115
Public Made by Adomby adom
HUASHUO MOSFETs, TO-252-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHSU6115
HUASHUO · MOSFETs · TO-252-2
HSU6115 from HUASHUO, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage rated ±20 V, with threshold VGS(th) of -1.0 to -2.5 V at ID=-250uA. |
| 2 | D | passive | Drain (exposed tab); drain-source voltage rated -60 V, continuous drain current -35 A at TC=25℃. |
| 3 | S | passive | Source; continuous source current up to -35 A and pulsed -70 A through the body diode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | TO-252-2 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current, -VGS @ -10V (TC=25℃) | ID@TC=25℃ | -35 | A | 1 | |||
| Continuous Drain Current, -VGS @ -10V (TC=100℃) | ID@TC=100℃ | -27 | A | 1 | |||
| Pulsed Drain Current | IDM | -70 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 113 | mJ | 1 | |||
| Avalanche Current | IAS | 47.6 | A | 1 | |||
| Total Power Dissipation (TC=25℃) | PD@TC=25℃ | 52.1 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | Surface mounted on 1 inch FR-4 board with 2OZ copper (note 1) | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 2.4 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance (VGS=-10V) | RDS(ON) | 25 | mΩ | VGS=-10V, ID=-18A | 2 | ||
| Static Drain-Source On-Resistance (VGS=-4.5V) | RDS(ON) | 33 | mΩ | VGS=-4.5V, ID=-12A | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -1.7 | -2.5 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current (TJ=25℃) | IDSS | 1 | uA | VDS=-48V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current (TJ=55℃) | IDSS | 5 | uA | VDS=-48V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | -35 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | -70 | A | 2 | |||
| Diode Forward Voltage | VSD | -1 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
HSU6115 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2 (KiCad packages3D, STEP)
- 3D model files:
hsu6115-etched.step/hsu6115-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsu6115.step/hsu6115.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
d9752250949eb8c0, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).