component
G170P06M
Public Made by Adomby adom
GOFORD MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownG170P06M
GOFORD · MOSFETs · TO-263
G170P06M from GOFORD, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V, with threshold VGS(th) of -2.0 V min to -3.5 V max at ID = -250 µA. |
| 2 | D | passive | Drain (center lead, also connected to the exposed tab); VDS max -60 V, continuous ID -65 A, pulsed IDM -260 A. |
| 3 | S | passive | Source; body diode continuous current IS is -65 A with VSD max -1.2 V at ISD = -20 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | TO-263 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | -60 | V | VGS = 0V, ID = -250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS = -60V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | -2 | -2.5 | -3.5 | V | VDS = VGS, ID = -250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | 12 | 17 | mΩ | VGS = -10V, ID = -20A | 2 | |
| Continuous Body Diode Current | IS | -65 | A | TC = 25ºC | 2 | ||
| Body Diode Voltage | VSD | -1.2 | V | TJ = 25ºC, ISD = -20A, VGS = 0V | 2 | ||
| Drain-Source Voltage | VDS | -60 | V | TC = 25ºC | 1 | ||
| Continuous Drain Current | ID | -65 | A | TC = 25ºC | 1 | ||
| Pulsed Drain Current | IDM | -260 | A | TC = 25ºC | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC = 25ºC | 1 | |
| Power Dissipation | PD | 130 | W | TC = 25ºC | 1 | ||
| Single Pulse Avalanche Energy | EAS | 196 | mJ | TC = 25ºC | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ºC | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RthJA | 62 | ºC/W | 1 | |||
| Maximum Junction-to-Case | RthJC | 0.96 | ºC/W | 1 |
CAD (KiCad official)
- Symbol:
G170P06M - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
g170p06m-etched.step/g170p06m-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);g170p06m.step/g170p06m.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOFORD datasheet (6 pp, sha256
ff8e1c0f6770984b, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).