Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

AGM3015H

AGM-Semi · MOSFETs · TO-263

AGM3015H from AGM-Semi, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±20 V, with threshold VGS(th) 1.2 V min, 1.7 V typ, 2.2 V max at VDS=VGS, ID=250 µA.
2 D passive Drain (also the exposed tab); VDS is 30 V max, with continuous ID of 138 A at Tc=25℃ (package limited).
3 S passive Source; body-diode continuous current is 138 A max, with RDS(on) of 1.5 mΩ typ (2.0 mΩ max) at VGS=10 V, ID=20 A.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (VGS=0V) VDS 30 V VGS=0V 1
Gate-Source Voltage (VDS=0V) VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID 138 A Tc=25℃ (Note 1) 1
Drain Current-Continuous ID 87 A Tc=100℃ 1
Drain Current-Pulsed IDM (pluse) 55 A Note 2 1
Maximum Power Dissipation PD 58 w Tc=25℃ 1
Maximum Power Dissipation PD 23 w Tc=100℃ 1
Avalanche energy EAS 729 mJ Note 3: TJ=25℃, VDD=20V, Vgs=10V, ID=54A, L=0.5mH, RG=25ohm 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 40 ℃/W Steady State 1
Thermal Resistance Junction-Case RθJC 2.15 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1.2 1.7 2.2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(on) 1.5 2 mΩ VGS=10V, ID=20A 2
Drain-Source On-State Resistance RDS(on) 2.4 4 mΩ VGS=4.5V, ID=15A 2
Source-Drain Current (Body Diode) ISD 138 A 2
Forward on Voltage VSD 1.2 V VGS=0V,IS=20A 2

CAD (KiCad official)

  • Symbol: AGM3015H
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: agm3015h-etched.step / agm3015h-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm3015h.step / agm3015h.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (8 pp, sha256 41ebc3b1e4087636, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF