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HYG800P10LR1D

Public Made by Adom

by adom

HUAYI MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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HYG800P10LR1D

HUAYI · MOSFETs · TO-252-2L

HYG800P10LR1D from HUAYI, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of -1.0 to -3.0 V at IDS=-250uA.
2 D passive Drain, connected to the exposed tab; drain-source voltage rated -100 V and continuous drain current -20 A at Tc=25°C.
3 S passive Source; continuous source current of -20 A at Tc=25°C, with the body diode forward voltage at most -1.2 V at ISD=-10A.

Key specifications

Parameter Value
Manufacturer HUAYI
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS -100 V 2
Gate-Source Voltage VGSS -20 20 V 2
Maximum Junction Temperature TJ 175 °C 2
Storage Temperature Range TSTG -55 175 °C 2
Drain Current-Continuous IS -20 A Tc=25°C; Mounted on Large Heat Sink 2
Pulsed Drain Current IDM -75 A Tc=25°C 2
Continuous Drain Current ID -20 A Tc=25°C 2
Continuous Drain Current ID -14.1 A Tc=100°C 2
Maximum Power Dissipation PD 75 W Tc=25°C 2
Maximum Power Dissipation PD 37.5 W Tc=100°C 2
Thermal Resistance, Junction-to-Case RJC 2 °C/W 2
Thermal Resistance, Junction-to-Ambient RJA 110 °C/W Surface mounted on FR-4 board 2
Single Pulsed-Avalanche Energy EAS 82.9 mJ L=0.3mH 2
Drain-Source Breakdown Voltage BVDSS -100 V VGS=0V,IDS=-250uA 2
Drain-to-Source Leakage Current IDSS -1 uA VDS=-100V, VGS=0V 2
Drain-to-Source Leakage Current IDSS -50 uA TJ=125°C 2
Gate Threshold Voltage VGS(th) -1 -1.8 -3 V VDS=VGS, IDS=-250uA 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Drain-Source On-state Resistance RDS(ON) 77 98 mΩ VGS=-10V,ID= -10A 2
Drain-Source On-state Resistance RDS(ON) 86 110 mΩ VGS=-4.5V,ID= -10A 2
Diode Forward Voltage VSD -0.82 -1.2 V ISD= -10A,VGS=0V 2

CAD (KiCad official)

  • Symbol: HYG800P10LR1D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: hyg800p10lr1d-etched.step / hyg800p10lr1d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hyg800p10lr1d.step / hyg800p10lr1d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUAYI datasheet (11 pp, sha256 70ad5bad067d8d58, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF