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Contents

README

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TS0512PMX

Shenzhen JingYang · ESD And Surge Protection (TVS/ESD) · SOT-143

TS0512PMX from Shenzhen JingYang, in a SOT-143. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GND power_in Ground reference pin for the two protected data lines (bottom-left position in the SOT-143 top view), per the datasheet pin configuration.
2 IO1 bidirectional Protected data line 1 (bottom-right position in the SOT-143 top view); the device clamps transients on this I/O to GND, with 5.0 V nominal reverse working voltage and 3.5 pF typical capacitance at 0 V.
3 IO2 bidirectional Protected data line 2 (top-right position in the SOT-143 top view); the device clamps transients on this I/O to GND, with 5.0 V nominal reverse working voltage and 3.5 pF typical capacitance at 0 V.
4 VCC power_in Supply-side pin (top-left position in the SOT-143 top view) listed in the datasheet pin configuration; the datasheet gives no separate voltage limit or function for this pin.

Key specifications

Parameter Value
Manufacturer Shenzhen JingYang
Package SOT-143
Category Circuit Protection
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Peak Pulse Current (8/20μs) IPP 18 A 8/20μs 2
Peak Pulse Power (8/20μs) PPK 350 Watts 8/20μs 2
ESD per IEC 61000-4-2 (Air) VESD -30 30 kV IEC 61000-4-2 (Air) 2
ESD per IEC 61000-4-2 (Contact) VESD -30 30 kV IEC 61000-4-2 (Contact) 2
Operating Temperature TOPT -55 125 C 2
Storage Temperature TSTG -55 150 C 2
Reverse Leakage Current @ VRWM IR 0.1 1 μA VRWM = 5V, T = 25C; Between I/O and GND 2
Reverse Breakdown Voltage @ IT VBR 6 7 9 V IT = 1mA; Between I/O and GND 2
Clamping Voltage @ IPP = 1A VC 12 V IPP = 1A, tp = 8/20μs; Between I/O and GND 2
Clamping Voltage @ IPP = 5A VC 17 V IPP = 5A, tp = 8/20μs; Between I/O and GND 2
Forward Voltage @ IF VF 1.2 V IF = 15mA 2
Parasitic Capacitance (I/O to GND) CESD 5 pF VR = 0V, f = 1MHz; Between I/O and GND 2
Parasitic Capacitance (I/O to I/O) CESD 1.5 2.5 pF VR = 0V, f = 1MHz; Between I/O and I/O 2
Nominal Reverse Working Voltage VRWM 5 V 2

CAD (KiCad official)

  • Symbol: TS0512PMX
  • Footprint: Package_TO_SOT_SMD:SOT-143
  • 3D model: SOT-143 (KiCad packages3D, STEP)
  • 3D model files: ts0512pmx-etched.step / ts0512pmx-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ts0512pmx.step / ts0512pmx.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shenzhen JingYang datasheet (6 pp, sha256 728c2e1f213b6264, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF