component
SK8205-T8
Public Made by Adomby adom
Shikues MOSFETs, TSSOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSK8205-T8
Shikues · MOSFETs · TSSOP-8
SK8205-T8 from Shikues, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Common drain of the dual N-channel MOSFET pair, tied internally to pin 8; VDS max 20 V, continuous ID 6 A. |
| 2 | S1 | passive | Source of MOSFET 1; drain-source diode forward current IS max 2.5 A. |
| 3 | S1 | passive | Source of MOSFET 1, internally connected to pin 2; drain-source diode forward current IS max 2.5 A. |
| 4 | G1 | input | Gate of MOSFET 1; VGS max ±12 V, threshold 0.5 V min to 1.2 V max at 250 µA. |
| 5 | G2 | input | Gate of MOSFET 2; VGS max ±12 V, threshold 0.5 V min to 1.2 V max at 250 µA. |
| 6 | S2 | passive | Source of MOSFET 2, internally connected to pin 7; drain-source diode forward current IS max 2.5 A. |
| 7 | S2 | passive | Source of MOSFET 2; drain-source diode forward current IS max 2.5 A. |
| 8 | D | passive | Common drain of the dual N-channel MOSFET pair, tied internally to pin 1; VDS max 20 V, continuous ID 6 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shikues |
| Package | TSSOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Drain Current-Continuous | ID | 6 | A | TJ=25℃ | 1 | ||
| Drain Current-Pulsed | IDM | 20 | A | Pulse Width ≤ 300μs, Duty Cycle ≤ 2% | 1 | ||
| Drain-Source Diode Forward Current | IS | 2.5 | A | 1 | |||
| Maximum Power Dissipation | PD | 1.5 | W | Surface Mounted on FR4 Board, T<10 sec | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 80 | ℃/W | Surface Mounted on FR4 Board, T<10 sec | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=20V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.7 | 1.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 20 | 27 | mΩ | VGS=4.5V, ID=4.5A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 26 | 32 | mΩ | VGS=2.5V, ID=3.5A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=1.7A | 2 |
CAD (KiCad official)
- Symbol:
SK8205-T8 - Footprint:
Package_SO:TSSOP-8_3x3mm_P0.65mm - 3D model: TSSOP-8 (KiCad packages3D, STEP)
- 3D model files:
sk8205-t8-etched.step/sk8205-t8-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sk8205-t8.step/sk8205-t8.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shikues datasheet (6 pp, sha256
d5fe7a4625a9b485, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).