component
AOTS21311C
Public Made by Adomby adom
Alpha & Omega Semicon MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAOTS21311C
Alpha & Omega Semicon · MOSFETs · TSOP-6
AOTS21311C from Alpha & Omega Semicon, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain of the P-channel MOSFET, rated for VDS of -30V and continuous ID of -5.9A at TA=25°C (tied to pins 2, 5 and 6). |
| 2 | D | passive | Drain of the P-channel MOSFET, rated for VDS of -30V and continuous ID of -5.9A at TA=25°C (tied to pins 1, 5 and 6). |
| 3 | G | input | Gate of the P-channel MOSFET, with a maximum gate-source voltage of ±20V and a threshold voltage of -1.2V min to -2.2V max. |
| 4 | S | passive | Source of the P-channel MOSFET, with a maximum body-diode continuous current of -3A. |
| 5 | D | passive | Drain of the P-channel MOSFET, rated for VDS of -30V and continuous ID of -5.9A at TA=25°C (tied to pins 1, 2 and 6). |
| 6 | D | passive | Drain of the P-channel MOSFET, rated for VDS of -30V and continuous ID of -5.9A at TA=25°C (tied to pins 1, 2 and 5). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha & Omega Semicon |
| Package | TSOP-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | ID=-250mA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-30V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -5 | μA | VDS=-30V, VGS=0V, TJ=55°C | 2 | ||
| Gate-Body Leakage Current | IGSS | -10 | 10 | μA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.2 | -1.7 | -2.2 | V | VDS=VGS, ID=-250mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 37 | 45 | mΩ | VGS=-10V, ID=-5.9A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 52 | 64 | mΩ | VGS=-10V, ID=-5.9A, TJ=125°C | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 52 | 65 | mΩ | VGS=-4.5V, ID=-5A | 2 | |
| Diode Forward Voltage | VSD | -0.8 | -1 | V | IS=-1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | -3 | A | 2 | |||
| Gate resistance | Rg | 15 | 25 | Ω | f=1MHz | 2 | |
| Total Gate Charge (10V) | Qg (10V) | 13.5 | 26 | nC | VGS=-10V, VDS=-15V, ID=-5.9A | 2 | |
| Total Gate Charge (4.5V) | Qg (4.5V) | 6.5 | 13 | nC | 2 | ||
| Gate Source Charge | Qgs | 2.5 | nC | VGS=-10V, VDS=-15V, ID=-5.9A | 2 | ||
| Gate Drain Charge | Qgd | 2.5 | nC | VGS=-10V, VDS=-15V, ID=-5.9A | 2 | ||
| Input Capacitance | Ciss | 720 | pF | VGS=0V, VDS=-15V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 80 | pF | VGS=0V, VDS=-15V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 70 | pF | VGS=0V, VDS=-15V, f=1MHz | 2 | ||
| Turn-On Delay Time | tD(on) | 8.5 | ns | VGS=-10V, VDS=-15V, RL=2.54W, RGEN=3W | 2 | ||
| Turn-On Rise Time | tr | 5 | ns | VGS=-10V, VDS=-15V, RL=2.54W, RGEN=3W | 2 | ||
| Turn-Off Delay Time | tD(off) | 39 | ns | VGS=-10V, VDS=-15V, RL=2.54W, RGEN=3W | 2 | ||
| Turn-Off Fall Time | tf | 14.5 | ns | VGS=-10V, VDS=-15V, RL=2.54W, RGEN=3W | 2 | ||
| Body Diode Reverse Recovery Time | trr | 10 | ns | IF=-5.9A, di/dt=500A/ms | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 13 | nC | IF=-5.9A, di/dt=500A/ms | 2 | ||
| Forward Transconductance | gFS | 13 | S | VDS=-5V, ID=-5.9A | 2 | ||
| Drain-Source Voltage | VDS | -30 | V | TA=25°C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -5.9 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | -4.6 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | -24 | A | 1 | |||
| Power Dissipation | PD | 2.5 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 1.6 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RqJA | 85 | °C/W | Steady-state (label on Figure 9) | 4 |
CAD (KiCad official)
- Symbol:
AOTS21311C - Footprint:
Package_SO:TSOP-6_1.65x3.05mm_P0.95mm - 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files:
aots21311c-etched.step/aots21311c-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aots21311c.step/aots21311c.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha & Omega Semicon datasheet (5 pp, sha256
743f15507f9748e1, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).