component
PBSS306PX
Public Made by Adomby adom
Nexperia Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownPBSS306PX
Nexperia · Bipolar (BJT) · SOT-89
PBSS306PX from Nexperia, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E | passive | Emitter terminal of the PNP low VCEsat transistor. |
| 2 | C | passive | Collector terminal of the PNP low VCEsat transistor. |
| 3 | B | passive | Base terminal of the PNP low VCEsat transistor. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| collector-base voltage | VCBO | -100 | V | open emitter | 3 | ||
| collector-emitter voltage | VCEO | -100 | V | open base | 3 | ||
| emitter-base voltage | VEBO | -5 | V | open collector | 3 | ||
| collector current | IC | -3.7 | A | 3 | |||
| peak collector current | ICM | -7.4 | A | single pulse; tp ≤ 1 ms | 3 | ||
| total power dissipation | Ptot | 0.6 | W | Tamb ≤ 25 °C; [1] FR4 PCB, single-sided copper, tin-plated, standard footprint | 3 | ||
| total power dissipation | Ptot | 1.65 | W | Tamb ≤ 25 °C; [2] FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2 | 3 | ||
| total power dissipation | Ptot | 2.1 | W | Tamb ≤ 25 °C; [3] ceramic PCB, Al2O3, standard footprint | 3 | ||
| junction temperature | Tj | 150 | °C | 3 | |||
| ambient temperature | Tamb | -65 | 150 | °C | 3 | ||
| storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| thermal resistance from junction to ambient | Rth(j-a) | 208 | K/W | in free air; [1] FR4 PCB, single-sided copper, tin-plated, standard footprint | 4 | ||
| thermal resistance from junction to ambient | Rth(j-a) | 76 | K/W | in free air; [2] FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2 | 4 | ||
| thermal resistance from junction to ambient | Rth(j-a) | 60 | K/W | in free air; [3] ceramic PCB, Al2O3, standard footprint | 4 | ||
| thermal resistance from junction to solder point | Rth(j-sp) | 20 | K/W | 4 | |||
| collector-base cut-off current | ICBO | -100 | nA | VCB = -80 V; IE = 0 A; Tamb = 25 °C | 6 | ||
| collector-base cut-off current | ICBO | -50 | µA | VCB = -80 V; IE = 0 A; Tj = 150 °C | 6 | ||
| emitter-base cut-off current | IEBO | -100 | nA | VEB = -5 V; IC = 0 A; Tamb = 25 °C | 6 | ||
| DC current gain | hFE | 200 | 300 | VCE = -2 V; IC = -0.5 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 6 | ||
| DC current gain | hFE | 150 | 260 | VCE = -2 V; IC = -1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 6 | ||
| DC current gain | hFE | 100 | 175 | VCE = -2 V; IC = -2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 6 | ||
| DC current gain | hFE | 25 | 40 | VCE = -2 V; IC = -4 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 6 | ||
| collector-emitter saturation voltage | VCEsat | -45 | -60 | mV | IC = -0.5 A; IB = -50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 6 | |
| collector-emitter saturation voltage | VCEsat | -90 | -130 | mV | IC = -1 A; IB = -50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 6 | |
| collector-emitter saturation voltage | VCEsat | -210 | -300 | mV | 6 | ||
| collector-emitter saturation resistance | RCEsat | 52 | 75 | mΩ | IC = -4 A; IB = -400 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 6 | |
| base-emitter saturation voltage | VBEsat | -0.81 | -0.9 | V | 6 | ||
| base-emitter saturation voltage | VBEsat | -0.93 | -1.05 | V | IC = -4 A; IB = -400 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 6 | |
| base-emitter turn-on voltage | VBEon | -0.78 | -0.85 | V | VCE = -2 V; IC = -2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C | 6 | |
| collector capacitance | Cc | 50 | 80 | pF | VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C | 6 |
CAD (KiCad official)
- Symbol:
PBSS306PX - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
pbss306px-etched.step/pbss306px-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pbss306px.step/pbss306px.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (14 pp, sha256
d8585006900dc856, retrieved 2026-10-17, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).