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Contents

README

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STQ2HNK60ZR-AP

STMicroelectronics · MOSFETs · TO-92

STQ2HNK60ZR-AP from STMicroelectronics, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal with ±30 V maximum gate-source voltage and ±10 μA maximum gate-source leakage current at VDS = 0 V, VGS = ±20 V.
2 D passive Drain terminal with 600 V maximum drain-source voltage, 500 mA continuous drain current at TC = 25°C or 320 mA at TC = 100°C, and 4.8 Ω maximum on-resistance at VGS = 10 V, ID = 1 A.
3 S passive Source terminal with 1.6 V forward diode voltage at ISD = 2 A and 178 ns reverse recovery time at ISD = 2 A, di/dt = 100 A/μs, VDD = 20 V.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-92
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: STQ2HNK60ZR-AP
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92 (KiCad packages3D, STEP)
  • 3D model files: stq2hnk60zr-ap-etched.step / stq2hnk60zr-ap-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stq2hnk60zr-ap.step / stq2hnk60zr-ap.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (13 pp, sha256 2f17f51adfc63028, retrieved 2026-09-26, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-4-6 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF