component
4N60G-TN3-R
Public Made by Adomby adom
UTC(Unisonic Tech) MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown4N60G-TN3-R
UTC(Unisonic Tech) · MOSFETs · TO-252
4N60G-TN3-R from UTC(Unisonic Tech), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±30 V maximum, with a gate threshold of 2.0 to 4.0 V at 250 μA. |
| 2 | D | passive | Drain; drain-source voltage is rated at 600 V maximum with 4.0 A continuous and 16 A pulsed drain current. |
| 3 | S | passive | Source; the body diode carries 4.4 A maximum continuous and 17.6 A pulsed source-drain current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC(Unisonic Tech) |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 600 | V | VGS = 0V, ID = 250μA | 4 | ||
| Drain-Source Leakage Current | IDSS | 10 | μA | VDS = 600V, VGS = 0V | 4 | ||
| Drain-Source Leakage Current | IDSS | 100 | µA | VDS = 480V, TC = 125°С | 4 | ||
| Gate-Source Leakage Current Forward | IGSS | 100 | nA | VGS = 30V, VDS = 0V | 4 | ||
| Gate-Source Leakage Current Reverse | IGSS | -100 | nA | VGS = -30V, VDS = 0V | 4 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS = VGS, ID = 250μA | 4 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 1.9 | 2.5 | Ω | VGS = 10 V, ID = 2.2A | 4 | |
| Input Capacitance | CISS | 550 | 670 | pF | VDS = 25V, VGS = 0V, f = 1MHz | 4 | |
| Output Capacitance | COSS | 80 | 100 | pF | VDS = 25V, VGS = 0V, f = 1MHz | 4 | |
| Reverse Transfer Capacitance | CRSS | 30 | 50 | pF | VDS = 25V, VGS = 0V, f = 1MHz | 4 | |
| Total Gate Charge | QG | 80 | 100 | nC | VDS= 480V,ID= 4.0A, VGS= 10V (Note 1, 2) | 4 | |
| Turn-On Delay Time | tD(ON) | 35 | 55 | ns | VDD = 300V, ID = 4.0A, RG = 25Ω (Note 1, 2) | 4 | |
| Turn-On Rise Time | tR | 80 | 110 | ns | VDD = 300V, ID = 4.0A, RG = 25Ω (Note 1, 2) | 4 | |
| Turn-Off Delay Time | tD(OFF) | 160 | 200 | ns | VDD = 300V, ID = 4.0A, RG = 25Ω (Note 1, 2) | 4 | |
| Turn-Off Fall Time | tF | 120 | 150 | ns | VDD = 300V, ID = 4.0A, RG = 25Ω (Note 1, 2) | 4 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 4.4 | A | 4 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 17.6 | A | 4 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | VGS = 0V, IS = 4.4A | 4 | ||
| Drain-Source Voltage | VDSS | 600 | V | TC = 25°С | 3 | ||
| Gate-Source Voltage | VGSS | -30 | 30 | V | TC = 25°С | 3 | |
| Avalanche Current | IAR | 4.4 | A | Note 2 | 3 | ||
| Drain Current Continuous | ID | 4 | A | TC = 25°С | 3 | ||
| Drain Current Pulsed | IDM | 16 | A | Note 2 | 3 | ||
| Avalanche Energy Single Pulsed | EAS | 260 | mJ | L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C | 3 | ||
| Avalanche Energy Repetitive | EAR | 10.6 | mJ | Note 2 | 3 | ||
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C | 3 | ||
| Power Dissipation (TO-252) | PD | 50 | W | TC = 25°С | 3 | ||
| Junction Temperature | TJ | 150 | °С | 3 | |||
| Operating Temperature | TOPR | -55 | 150 | °С | 3 | ||
| Storage Temperature | TSTG | -55 | 150 | °С | 3 | ||
| Junction to Ambient (TO-252) | θJA | 110 | °С/W | 3 | |||
| Junction to Case (TO-252) | θJC | 2.5 | °С/W | 3 | |||
| Breakdown Voltage Temperature Coefficient | △BVDSS/△TJ | 0.6 | V/°С | ID=250μA,Referenced to 25°C | 4 | ||
| Gate-Source Charge | QGS | 5 | nC | VDS= 480V,ID= 4.0A, VGS= 10V (Note 1, 2) | 4 | ||
| Gate-Drain Charge | QGD | 20 | nC | VDS= 480V,ID= 4.0A, VGS= 10V (Note 1, 2) | 4 | ||
| Reverse Recovery Time | trr | 250 | ns | VGS = 0 V, IS = 4.4A, dIF/dt = 100 A/μs (Note 1) | 4 | ||
| Reverse Recovery Charge | Qrr | 1.5 | μC | VGS = 0 V, IS = 4.4A, dIF/dt = 100 A/μs (Note 1) | 4 |
CAD (KiCad official)
- Symbol:
4N60G-TN3-R - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
4n60g-tn3-r-etched.step/4n60g-tn3-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);4n60g-tn3-r.step/4n60g-tn3-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC(Unisonic Tech) datasheet (9 pp, sha256
cf582fa433b49421, retrieved 2026-10-24, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).