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SI3443DV-T1-GE3-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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SI3443DV-T1-GE3-VB

VBsemi Elec · MOSFETs · TSOP-6

SI3443DV-T1-GE3-VB from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain, connected internally with pins 2, 5 and 6; P-channel drain-source rating VDS of -30 V.
2 D passive Drain, connected internally with pins 1, 5 and 6; continuous drain current up to -4.8 A at TC = 25 °C.
3 G input Gate; gate-source voltage limit of ±20 V with threshold VGS(th) of -0.5 V to -2.0 V.
4 S passive Source; continuous source-drain diode current of -2.5 A at TC = 25 °C.
5 D passive Drain, connected internally with pins 1, 2 and 6; pulsed drain current IDM of -20 A.
6 D passive Drain, connected internally with pins 1, 2 and 5; RDS(on) of 0.049 Ω at VGS = -10 V.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TSOP-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -4.8 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current ID -4.1 A TJ = 150 °C, TC = 70 °C 1
Continuous Drain Current ID -4 A TJ = 150 °C, TA = 25 °C, b, c 1
Continuous Drain Current ID -3.5 A TJ = 150 °C, TA = 70 °C, b, c 1
Pulsed Drain Current IDM -20 A 1
Continuous Source-Drain Diode Current IS -2.5 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -1.67 A TA = 25 °C, b, c 1
Maximum Power Dissipation PD 3 W TC = 25 °C 1
Maximum Power Dissipation PD 2 W TC = 70 °C 1
Maximum Power Dissipation PD 1.3 W TA = 70 °C, b, c 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 55 62.5 °C/W t ≤ 5 s 1
Maximum Junction-to-Foot (Drain) RthJF 34 41 °C/W Steady State 1
Drain-Source Breakdown Voltage VDS -30 V VGS = 0 V, ID = - 250 µA 2
Gate-Source Threshold Voltage VGS(th) -0.5 -2 V VDS = VGS, ID = - 250 µA 2
Gate-Source Leakage IGSS 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = - 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = - 30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -20 A VDS ≤ - 5 V, VGS = - 10 V 2
Total Gate Charge Qg 10 15 nC VDS = - 15 V, VGS = - 10 V, ID = - 4.1 A 2
Total Gate Charge Qg 5.1 8 nC VDS = - 15 V, VGS = - 4.5 V, ID = - 4.1 A 2
Turn-On Delay Time td(on) 40 60 ns VDD = - 15 V, RL = 4.6 Ω, ID ≅ - 3.3 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Rise Time tr 80 120 ns VDD = - 15 V, RL = 4.6 Ω, ID ≅ - 3.3 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 20 30 ns VDD = - 15 V, RL = 4.6 Ω, ID ≅ - 3.3 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Fall Time tf 12 20 ns VDD = - 15 V, RL = 4.6 Ω, ID ≅ - 3.3 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 5 10 ns VDD = - 15 V, RL = 4.6 Ω, ID ≅ - 3.3 A, VGEN = - 10 V, Rg = 1 Ω 2
Rise Time tr 13 20 ns VDD = - 15 V, RL = 4.6 Ω, ID ≅ - 3.3 A, VGEN = - 10 V, Rg = 1 Ω 2
Fall Time tf 10 15 ns VDD = - 15 V, RL = 4.6 Ω, ID ≅ - 3.3 A, VGEN = - 10 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS -2.5 A TC = 25 °C 2
Pulse Diode Forward Current ISM -20 A 2
Body Diode Voltage VSD -0.8 -1.2 V IS = - 3.3 A 2
Body Diode Reverse Recovery Time trr 20 30 ns IF = - 3.3 A, di/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 20 30 nC IF = - 3.3 A, di/dt = 100 A/µs, TJ = 25 °C 2
VDS Temperature Coefficient ΔVDS/TJ -31 mV/°C ID = - 250 µA 2
VGS(th) Temperature Coefficient ΔVGS(th)/TJ 4.5 mV/°C ID = - 250 µA 2
Drain-Source On-State Resistance RDS(on) 0.049 Ω VGS = - 10 V, ID = - 4.1 A 2
Drain-Source On-State Resistance RDS(on) 0.054 Ω VGS = - 4.5 V, ID = - 1.0 A 2
Forward Transconductance gfs 8 S VDS = - 15 V, ID = - 4.1 A 2
Input Capacitance Ciss 450 pF VDS = - 15 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 80 pF VDS = - 15 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 63 pF VDS = - 15 V, VGS = 0 V, f = 1 MHz 2
Gate-Source Charge Qgs 1.8 nC 2
Gate-Drain Charge Qgd 2.5 nC 2
Gate Resistance Rg 7 Ω f = 1 MHz 2

CAD (KiCad official)

  • Symbol: SI3443DV-T1-GE3-VB
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: si3443dv-t1-ge3-vb-etched.step / si3443dv-t1-ge3-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si3443dv-t1-ge3-vb.step / si3443dv-t1-ge3-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 680158209bf640b8, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF