component
SP013N05AGHTD
Public Made by Adomby adom
Siliup MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSP013N05AGHTD
Siliup · MOSFETs · TO-263
SP013N05AGHTD from Siliup, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the MOSFET, with gate-source voltage rated at ±20 V per the absolute maximum ratings. |
| 2 | D | passive | Drain terminal of the MOSFET, with drain-source voltage rated at 135 V and continuous drain current of 160 A at Tc=25℃. |
| 3 | S | passive | Source terminal of the MOSFET, serving as the reference for the gate-source voltage rating of ±20 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Siliup |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 135 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | 160 | A | Tc=25℃ | 2 | ||
| Continuous Drain Current | ID | 105 | A | Tc=100℃ | 2 | ||
| Pulsed Drain Current | IDM | 640 | A | 2 | |||
| Single Pulse Avalanche Energy | EAS | 1024 | mJ | 2 | |||
| Power Dissipation | PD | 300 | W | Tc=25℃ | 2 | ||
| Thermal Resistance Junction-to-Case | RθJC | 0.42 | ℃/W | 2 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 135 | 150 | V | ID = 250μA, VGS = 0V | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS = 108V, VGS = 0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS = ±20V, VDS = 0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS = VGS, ID = 250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 4.6 | 6 | mΩ | VGS = 10V, ID = 20A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| Maximum Body-Diode Continuous Current | IS | 160 | A | 2 |
CAD (KiCad official)
- Symbol:
SP013N05AGHTD - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
sp013n05aghtd-etched.step/sp013n05aghtd-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sp013n05aghtd.step/sp013n05aghtd.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Siliup datasheet (6 pp, sha256
be1f311ee11b5e3c, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).