component
ME20P06-G
Public Made by Adomby adom
MATSUKI MOSFETs, TO-252-2(DPAK). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownME20P06-G
MATSUKI · MOSFETs · TO-252-2(DPAK)
ME20P06-G from MATSUKI, in a TO-252-2(DPAK). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, with a maximum gate-source voltage of ±20 V and a gate threshold of -1 to -3 V. |
| 2 | D | passive | Drain (center pin, connected to the mounting tab), rated for VDS of -60 V and continuous ID of -17.7 A at TC=25℃. |
| 3 | S | passive | Source of the P-channel MOSFET, with pulsed drain current up to -71 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MATSUKI |
| Package | TO-252-2(DPAK) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -17.7 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | -14.1 | A | TC=70℃ | 1 | ||
| Pulsed Drain Current | IDM | -71 | A | 1 | |||
| Maximum Power Dissipation | PD | 39.1 | W | TC=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 25 | W | TC=70℃ | 1 | ||
| Operating Junction Temperature | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance-Junction to Case | RθJC | 3.2 | ℃/W | Device mounted on 1 in² FR4 board with 2 oz copper (footnote *) | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | -60 | V | VGS=0V, ID=-250μA | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -3 | V | VDS=VGS, ID=-250μA | 2 | |
| Gate Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-60V, VGS=0V | 2 | ||
| Drain-Source On-State Resistance | RDS(ON) | 65 | 78 | mΩ | VGS=-10V, ID=-20A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 80 | 100 | mΩ | VGS=-4.5V, ID=-16A | 2 | |
| Diode Forward Voltage | VSD | -1 | -1.2 | V | IS=-20A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
ME20P06-G - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2(DPAK) (KiCad packages3D, STEP)
- 3D model files:
me20p06-g-etched.step/me20p06-g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);me20p06-g.step/me20p06-g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MATSUKI datasheet (5 pp, sha256
bac098b1e10a6344, retrieved 2026-10-10, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).