component
MMBTA92
Public Made by Adomby adom
hongjiacheng Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMMBTA92
hongjiacheng · Bipolar (BJT) · SOT-23
MMBTA92 from hongjiacheng, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | passive | Base terminal of the PNP transistor; the emitter-base voltage limit is VEBO -5.0 V, and the emitter-base cut-off current is max -100 nA at VEB = -5.0 V. |
| 2 | E | passive | Emitter terminal of the PNP transistor; the emitter-base breakdown voltage V(BR)EBO is -5.0 V minimum at IE = -100 µA. |
| 3 | C | passive | Collector terminal of the PNP transistor; the maximum ratings are VCBO -300 V, VCEO -300 V, IC -0.5 A, and collector power dissipation PC 350 mW. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | hongjiacheng |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | V(BR)CBO | -300 | V | IC=-100μA, IE=0 | 1 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -300 | V | IC=-1.0mA, IB=0 | 1 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | V | IE=-100μA, IC=0 | 1 | ||
| Collector-Base cut-off current | ICBO | -250 | nA | VCB= -200V, IE=0 | 1 | ||
| Emitter-Base cut-off current | IEBO | -100 | nA | VEB= -5.0V, IC=0 | 1 | ||
| DC Current Gain hFE(1) | hFE(1) | 60 | IC= -1.0mA VCE= -10V | 1 | |||
| DC Current Gain hFE(2) | hFE(2) | 100 | 300 | IC= -10mA VCE= -10V | 1 | ||
| DC Current Gain hFE(3) | hFE(3) | 60 | IC= -30mA VCE= -10V | 1 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.2 | V | IC= -20mA, IB= -2.0mA | 1 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | -0.9 | V | IC= -20mA, IB= -2.0mA | 1 | ||
| Transition frequency | fT | 50 | MHz | IC= -10mA, VCE= -20V, f=30MHz | 2 | ||
| Collector-Base Voltage | VCBO | -300 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | -300 | V | 1 | |||
| Emitter-Base Voltage | VEBO | -5 | V | 1 | |||
| Collector Current | IC | -0.5 | A | 1 | |||
| Collector Power Dissipation | PC | 350 | mW | 1 | |||
| Storage temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Junction temperature | Tj | -55 | 150 | ℃ | 1 | ||
| Typical Thermal Resistance junction-to-ambient | RθJ-A | 417 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
MMBTA92 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
mmbta92-etched.step/mmbta92-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbta92.step/mmbta92.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: hongjiacheng datasheet (3 pp, sha256
527d2d82fc79b1a9, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).