component

SE3400

Public Made by Adom

by adom

SINO IC MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsse3400factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

SE3400

SINO IC · MOSFETs · SOT-23-3

SE3400 from SINO IC, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±12 V, with threshold VGS(th) 0.7 V min, 1.1 V typ, 1.4 V max at ID=250μA.
2 S passive Source; connects to the body diode anode, with continuous drain current of 5.8 A rated.
3 D passive Drain; drain-source voltage rated 30 V and continuous drain current 5.8 A.

Key specifications

Parameter Value
Manufacturer SINO IC
Package SOT-23-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -12 12 V 1
Drain Current Continuous ID 5.8 A 1
Drain Current Continuous ID 4.9 A 70℃ 1
Total Power Dissipation PD 1.4 W 1
Operating Junction Temperature Range TJ -50 150 °C 1
Maximum Junction-to-Ambient, Steady-State RθJA 65 90 Steady-State 1
Maximum Junction-to-Case, Steady-State RθJC 0.8 Steady-State 1
Drain-Source Breakdown Voltage BVDSS 30 V ID=250μA, VGS=0 V 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=24 V, VGS=0 V 2
Gate-Body Leakage Current IGSS 100 nA VDS=0 V, VGS=±12 V 2
Gate Threshold Voltage VGS(th) 0.7 1.1 1.4 V VDS=VGS, ID=250μA 2
Static Drain-Source On-Resistance RDS(ON) 22 28 mΩ VGS=10V, ID=5.8A 2
Static Drain-Source On-Resistance RDS(ON) 27 33 mΩ VGS=4.5V, ID=5A 2
Static Drain-Source On-Resistance RDS(ON) 43 52 mΩ VGS=2.5V, ID=4A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, ID=1A 2
Input Capacitance Ciss 823 pF 2
Output Capacitance Coss 99 pF VGS=0V, VDS=15V, f=1MHz 2
Reverse Transfer Capacitance Crss 77 pF 2
Turn-On Time TON 7 14 ns 2
Turn-Off Time TOFF 38 76 ns 2
Turn-on Rise Time Tr 15 30 ns 2
Turn-on Fall Time Tf 3 6 ns 2
Total Gate Charge Qg 11 14 nC 2
Gate-Source Charge Qgs 1.6 2.1 nC 2
Gate-Drain Charge Qgd 3 3.6 nC 2
Body Diode Reverse Recovery Time trr 16 20 ns IF=5A, dI/dt=100A/μs 2
Body Diode Reverse Recovery Charge Qrr 8.9 12 nC IF=5A, dI/dt=100A/μs 2

CAD (KiCad official)

  • Symbol: SE3400
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3 (KiCad packages3D, STEP)
  • 3D model files: se3400-etched.step / se3400-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); se3400.step / se3400.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SINO IC datasheet (5 pp, sha256 b4bcef1cc8b8af55, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF