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GC2M0080120D

Public Made by Adom

by adom

SUPSiC Silicon Carbide Field Effect Transistor (MOSFET), TO247-3. Datasheet-verified pinout, KiCad symbol/footprint/3D.

componentsilicon carbide (sic) devicesgc2m0080120d
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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GC2M0080120D

SUPSiC · Silicon Carbide Field Effect Transistor (MOSFET) · TO247-3

GC2M0080120D from SUPSiC, in a TO247-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Insulated gate control terminal for the SiC N-channel enhancement-mode MOSFET. Absolute max VGS = -10/+25 V; recommended operating VGS = -5/+20 V. Typical VGS(th) = 2.9 V @ ID = 5 mA.
2 D passive Drain. High-voltage power terminal, connected to the tab. VDS(max) = 1200 V; continuous ID = 36 A @ TC = 25 °C (24 A @ TC = 100 °C); RDS(on) typ. 80 mΩ @ VGS = 20 V, ID = 20 A.
3 S passive Source. Low-side power terminal and gate-drive return; also the anode of the intrinsic SiC body diode (VSD typ. 4.3 V @ ISD = 10 A, VGS = -5 V).

Key specifications

Parameter Value
Manufacturer SUPSiC
Package TO247-3
Category Silicon Carbide (SiC) Devices
Pins 3

Ordering variants

Same part, different packaging or reel option.

  • GC2M0080120D

CAD (KiCad official)

  • Symbol: GC2M0080120D
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO247-3 (KiCad packages3D, STEP)
  • 3D model files: gc2m0080120d-etched.step / gc2m0080120d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); gc2m0080120d.step / gc2m0080120d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SUPSiC datasheet (3 pp, sha256 b9c8c524381629ac, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF