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Contents

README

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IRFR9110TRPBF

Vishay Intertech · MOSFETs · TO-252-2(DPAK)

IRFR9110TRPBF from Vishay Intertech, in a TO-252-2(DPAK). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET, with VGS rated at ±20 V maximum.
2 D passive Drain, connected to the mounting tab, with VDS rated at -100 V and continuous ID of -3.1 A at TC = 25 °C.
3 S passive Source of the P-channel MOSFET, at the end of the lead opposite the gate, with body diode continuous current IS of -3.1 A.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TO-252-2(DPAK)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -3.1 A VGS at -10 V, TC = 25 °C 1
Continuous Drain Current ID -2 A VGS at -10 V, TC = 100 °C 1
Pulsed Drain Current IDM -12 A 1
Single Pulse Avalanche Energy EAS 140 mJ 1
Repetitive Avalanche Current IAR -3.1 A 1
Repetitive Avalanche Energy EAR 2.5 mJ 1
Maximum Power Dissipation PD 25 W TC = 25 °C 1
Maximum Power Dissipation (PCB Mount) PD 2.5 W TA = 25 °C, PCB mount (1 in square FR-4 or G-10) 1
Peak Diode Recovery dV/dt dV/dt -5.5 V/ns 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 260 °C for 10 s 1
Maximum Junction-to-Ambient RthJA 110 °C/W 2
Maximum Junction-to-Ambient (PCB Mount) RthJA 50 °C/W PCB mount 2
Maximum Junction-to-Case (Drain) RthJC 5 °C/W 2
Drain-Source Breakdown Voltage VDS -100 V VGS = 0 V, ID = 250 μA 2
Gate-Source Threshold Voltage VGS(th) -2 -4 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS -100 μA VDS = -100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -500 μA VDS = -80 V, VGS = 0 V, TJ = 125 °C 2
Drain-Source On-State Resistance RDS(on) 1.2 Ω VGS = -10 V, ID = -1.9 A 2
Forward Transconductance gfs 0.97 S VDS = -50 V, ID = -1.9 A 2
Total Gate Charge Qg 8.7 nC VGS = -10 V, ID = -4.0 A, VDS = -80 V 2
Gate-Source Charge Qgs 2.2 nC VGS = -10 V, ID = -4.0 A, VDS = -80 V 2
Gate-Drain Charge Qgd 4.1 nC VGS = -10 V, ID = -4.0 A, VDS = -80 V 2
Continuous Source-Drain Diode Current IS -3.1 A 2
Pulsed Diode Forward Current ISM -12 A 2
Body Diode Voltage VSD -5.5 V TJ = 25 °C, IS = -3.1 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 160 ns TJ = 25 °C, IF = -4.0 A, dI/dt = 100 A/μs 2
Body Diode Reverse Recovery Charge Qrr 0.3 μC TJ = 25 °C, IF = -4.0 A, dI/dt = 100 A/μs 2

CAD (KiCad official)

  • Symbol: IRFR9110TRPBF
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2(DPAK) (KiCad packages3D, STEP)
  • 3D model files: irfr9110trpbf-etched.step / irfr9110trpbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfr9110trpbf.step / irfr9110trpbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (11 pp, sha256 ab4b6265b86db891, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF