component
HKTD4N65
Public Made by Adomby adom
Guangdong Hottech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHKTD4N65
Guangdong Hottech · MOSFETs · TO-252
HKTD4N65 from Guangdong Hottech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage rated ±30 V with threshold VGS(th) of 2.0 V min to 4.0 V max at VDS=VGS, ID=250µA. |
| 2 | D | passive | Drain (also the exposed metal tab); drain-source voltage rated 650 V and continuous drain current 4 A. |
| 3 | S | passive | Source; body diode continuous current 4 A and pulsed 16 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Guangdong Hottech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 650 | V | VGS = 0V, ID = 250µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±30V | 2 | |
| Drain-Source On-Resistance | RDS(on) | 2.22 | 2.6 | Ω | VGS = 10V, ID =1A | 2 | |
| Continuous Body Diode Current | IS | 4 | A | TC = 25 ºC | 2 | ||
| Pulsed Diode Forward Current | ISM | 16 | A | 2 | |||
| Body Diode Voltage | VSD | 0.9 | V | TJ = 25ºC, ISD = 1.0A, VGS = 0V | 2 | ||
| Drain-source voltage | VDS | 650 | V | 1 | |||
| Gate-source voltage | VGS | -30 | 30 | V | 1 | ||
| Continuous drain current | ID | 4 | A | VGS=10V | 1 | ||
| Pulsed drain current (Note 1) | IDM | 16 | A | 1 | |||
| Power dissipation | PD | 23.1 | W | 1 | |||
| Operating junction and storage temperature | TJ,TSTG | -55 | 150 | °C | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 250 | mJ | VDD=20V, L=0.5mH, RG=25Ω, Starting TJ = 25°C | 1 | ||
| Lead Temperature for Soldering Purposes | TL | 260 | °C | 1/8'' from case for 10s | 1 | ||
| Thermal resistance from junction to ambient | RθJA | 100 | °C/W | junction to ambient | 1 |
CAD (KiCad official)
- Symbol:
HKTD4N65 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
hktd4n65-etched.step/hktd4n65-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hktd4n65.step/hktd4n65.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Guangdong Hottech datasheet (5 pp, sha256
64d45f32678080c8, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).