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Contents

README

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AOD607-MS

MSKSEMI · MOSFETs · TO-252-4

AOD607-MS from MSKSEMI, in a TO-252-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (30V, 15mΩ, 16A).
2 G1 input Gate of the N-channel MOSFET, rated ±20V VGS with threshold 1.0 to 2.5V.
3 S2 passive Source of the P-channel MOSFET (-30V, 30mΩ, -12A).
4 G2 input Gate of the P-channel MOSFET, rated ±20V VGS with threshold -1 to -2.5V.
5 D1/D2 passive Exposed tab, common drain of both the N-channel and P-channel MOSFETs.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package TO-252-4
Category Transistors/Thyristors
Pins 5

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-ch) VDS 30 V 2
Drain-Source Voltage (P-ch) VDS -30 V 2
Gate-Source Voltage (N-ch) VGS -20 20 V 2
Gate-Source Voltage (P-ch) VGS -20 20 V 2
Drain Current Continuous (N-ch) ID 16 A TC=25℃ 2
Drain Current Continuous (P-ch) ID -12 A TC=25℃ 2
Drain Current Continuous (N-ch) ID 10.1 A TC=100℃ 2
Drain Current Continuous (P-ch) ID -7.6 A TC=100℃ 2
Drain Current Pulsed (N-ch) IDM 64 A 2
Drain Current Pulsed (P-ch) IDM -48 A 2
Power Dissipation PD 32.5 W TC=25℃ 2
Power Dissipation Derate above 25℃ 0.26 W/℃ 2
Storage Temperature Range TSTG -55 150 ℃ 2
Operating Junction Temperature Range TJ -55 150 ℃ 2
Thermal Resistance Junction to Ambient RθJA 62.5 ℃/W 2
Thermal Resistance Junction to Case RθJC 3.84 ℃/W 2
Drain-Source Breakdown Voltage (N-ch) BVDSS 30 V VGS=0V, ID=250uA 3
Drain-Source Leakage Current (N-ch) IDSS 1 uA VDS=30V, VGS=0V, TJ=25℃ 3
Drain-Source Leakage Current (N-ch) IDSS 10 uA VDS=24V, VGS=0V, TJ=125℃ 3
Gate-Source Leakage Current (N-ch) IGSS -100 100 nA VGS=±20V, VDS=0V 3
Static Drain-Source On-Resistance (N-ch) RDS(ON) 15 30 mΩ VGS=10V, ID=10A 3
Static Drain-Source On-Resistance (N-ch) RDS(ON) 30 40 mΩ VGS=4.5V, ID=5A 3
Gate Threshold Voltage (N-ch) VGS(th) 1 1.5 2.5 V VGS=VDS, ID=250uA 3
Continuous Source Current (N-ch) IS 16 A VG=VD=0V, Force Current 3
Pulsed Source Current (N-ch) ISM 32 A 3
Diode Forward Voltage (N-ch) VSD 1 V VGS=0V, IS=1A, TJ=25℃ 3
Drain-Source Breakdown Voltage (P-ch) BVDSS -30 V VGS=0V, ID=-250uA 5
Drain-Source Leakage Current (P-ch) IDSS -1 uA VDS=-30V, VGS=0V, TJ=25℃ 5
Drain-Source Leakage Current (P-ch) IDSS -10 uA VDS=-24V, VGS=0V, TJ=125℃ 5
Gate-Source Leakage Current (P-ch) IGSS -100 100 nA VGS=±20V, VDS=0V 5
Static Drain-Source On-Resistance (P-ch) RDS(ON) 30 40 mΩ VGS=-10V, ID=-7A 5
Static Drain-Source On-Resistance (P-ch) RDS(ON) 45 68 mΩ VGS=-4.5V, ID=-4A 5
Gate Threshold Voltage (P-ch) VGS(th) -1 -1.5 -2.5 V VGS=VDS, ID=-250uA 5
Continuous Source Current (P-ch) IS -12 A VG=VD=0V, Force Current 5
Pulsed Source Current (P-ch) ISM -24 A 5
Diode Forward Voltage (P-ch) VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 5

CAD (KiCad official)

  • Symbol: AOD607-MS
  • Footprint: Package_TO_SOT_SMD:TO-252-4
  • 3D model: TO-252-4 (KiCad packages3D, STEP)
  • 3D model files: aod607-ms-etched.step / aod607-ms-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aod607-ms.step / aod607-ms.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (8 pp, sha256 1103f963f69dfb3d, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF