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Contents

README

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AOD66923

Alpha Omega Semicon · MOSFETs · TO-252

AOD66923 from Alpha Omega Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; logic-level drive, rated for VGS of ±20V maximum, with RDS(ON) specified at VGS=10V and 4.5V.
2 D passive Drain, connected to the exposed tab; rated for VDS of 100V and continuous drain current of 58A at TC=25°C.
3 S passive Source; body-diode continuous current is rated at 58A.

Key specifications

Parameter Value
Manufacturer Alpha Omega Semicon
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 100 V ID=250mA, VGS=0V 2
Gate Threshold Voltage VGS(th) 1.6 2.1 2.6 V VDS=VGS, ID=250mA 2
Gate-Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Static Drain-Source On-Resistance RDS(ON) 9.2 11 mΩ VGS=10V, ID=20A 2
Static Drain-Source On-Resistance (TJ=125°C) RDS(ON) 16 19.5 mΩ TJ=125°C 2
Static Drain-Source On-Resistance RDS(ON) 11.7 15 mΩ VGS=4.5V, ID=20A 2
Body Diode Maximum Continuous Current IS 58 A 2
Diode Forward Voltage VSD 0.72 1 V IS=1A, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS=100V, VGS=0V 2
Zero Gate Voltage Drain Current (TJ=55°C) IDSS 5 µA TJ=55°C 2
Forward Transconductance gFS 50 S VDS=5V, ID=20A 2
Gate Resistance Rg 0.3 0.8 1.3 Ω f=1MHz 2
Total Gate Charge (10V) Qg (10V) 25 35 nC VGS=10V, VDS=50V, ID=20A 2
Total Gate Charge (4.5V) Qg (4.5V) 12.5 18 nC 2
Gate Source Charge Qgs 6 nC 2
Gate Drain Charge Qgd 3.5 nC 2
Input Capacitance Ciss 1725 pF VGS=0V, VDS=50V, f=1MHz 2
Output Capacitance Coss 360 pF VGS=0V, VDS=50V, f=1MHz 2
Reverse Transfer Capacitance Crss 7.5 pF VGS=0V, VDS=50V, f=1MHz 2
Output Charge Qoss 30 nC VGS=0V, VDS=50V 2
Turn-On Delay Time tD(on) 8.5 ns VGS=10V, VDS=50V, RL=2.5W, RGEN=3W 2
Turn-On Rise Time tr 3 ns VGS=10V, VDS=50V, RL=2.5W, RGEN=3W 2
Turn-Off Delay Time tD(off) 23 ns VGS=10V, VDS=50V, RL=2.5W, RGEN=3W 2
Turn-Off Fall Time tf 3.5 ns VGS=10V, VDS=50V, RL=2.5W, RGEN=3W 2
Body Diode Reverse Recovery Time trr 41 ns IF=20A, di/dt=500A/ms 2
Body Diode Reverse Recovery Charge Qrr 156 nC IF=20A, di/dt=500A/ms 2
Gate-Source Voltage VGS -20 20 V 1
Pulsed Drain Current IDM 130 A 1
Avalanche Energy EAS 45 mJ L=0.1mH 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Power Dissipation (TA=25°C) PDSM 6.2 W TA=25°C 1
Power Dissipation (TA=70°C) PDSM 4 W TA=70°C 1
Maximum Junction-to-Case Thermal Resistance RθJC 1.7 °C/W Steady-State 4
Maximum Junction-to-Ambient Thermal Resistance RθJA 50 °C/W Steady-State, TA=25°C, 1 in² FR-4 board 5

CAD (KiCad official)

  • Symbol: AOD66923
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: aod66923-etched.step / aod66923-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aod66923.step / aod66923.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Alpha Omega Semicon datasheet (6 pp, sha256 f450b415d8a2759a, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF