component
SSM3J35AMFV
Public Made by Adomby adom
TOSHIBA MOSFETs, SOT-723. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSSM3J35AMFV
TOSHIBA · MOSFETs · SOT-723
SSM3J35AMFV from TOSHIBA, in a SOT-723. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the P-channel MOSFET, with gate-source voltage limited to ±10 V (VGSS). |
| 2 | Source | passive | Source of the P-channel MOSFET; the drain-source voltage rating is -20 V (VDSS). |
| 3 | Drain | passive | Drain of the P-channel MOSFET, rated for -20 V drain-source voltage and -250 mA DC drain current (ID). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOT-723 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | -20 | V | 2 | |||
| Gate-source voltage | VGSS | -10 | 10 | V | 2 | ||
| Drain current (DC) | ID | -250 | mA | 2 | |||
| Drain current (pulsed) | IDP | -600 | mA | 2 | |||
| Power dissipation (Note 2) | PD | 150 | mW | Note 2: FR4 board 25.4 x 25.4 x 1.6 mm, Cu pad 0.585 mm2 | 2 | ||
| Power dissipation (Note 3) | PD | 500 | mW | Note 3: FR4 board 25.4 x 25.4 x 1.6 mm, Cu pad 645 mm2 | 2 | ||
| Channel temperature | Tch | 150 | °C | 2 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 2 | ||
| Gate leakage current | IGSS | -1 | 1 | µA | VDS = 0 V, VGS = ±10 V | 3 | |
| Drain cut-off current | IDSS | -1 | µA | VDS = -20 V, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | -20 | V | ID = -1 mA, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage (V(BR)DSX mode) | V(BR)DSX | -10 | V | ID = -1 mA, VGS = 10 V | 3 | ||
| Gate threshold voltage | Vth | -0.3 | -1 | V | VDS = -10 V, ID = -100 µA | 3 | |
| Drain-source on-resistance | RDS(ON) | 3.2 | 4 | Ω | ID = -10 mA, VGS = -1.2 V | 3 | |
| Drain-source on-resistance | RDS(ON) | 2.3 | 2.9 | Ω | ID = -20 mA, VGS = -1.5 V | 3 | |
| Drain-source on-resistance | RDS(ON) | 2 | 2.1 | Ω | ID = -50 mA, VGS = -1.8 V | 3 | |
| Drain-source on-resistance | RDS(ON) | 1.1 | 1.4 | Ω | ID = -150 mA, VGS = -4.5 V | 3 | |
| Diode forward voltage | VDSF | 0.83 | 1.2 | V | ID = 100 mA, VGS = 0 V | 4 |
CAD (KiCad official)
- Symbol:
SSM3J35AMFV - Footprint:
Package_TO_SOT_SMD:SOT-723 - 3D model: SOT-723, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.5 mm nominal SOT-723 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files:
ssm3j35amfv-etched.step/ssm3j35amfv-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ssm3j35amfv.step/ssm3j35amfv.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (8 pp, sha256
dc2e5f6d89a12869, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).