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BAS4006E6327
Public Made by Adomby adom
Infineon Technologies Schottky Barrier Diodes (SBD), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBAS4006E6327
Infineon Technologies · Schottky Barrier Diodes (SBD) · SOT-23
BAS4006E6327 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K1 | passive | Cathode of diode D1 in the BAS40-06 common-anode pair, rated for 40 V reverse voltage and 120 mA forward current. |
| 2 | K2 | passive | Cathode of diode D2 in the BAS40-06 common-anode pair, rated for 40 V reverse voltage and 120 mA forward current. |
| 3 | A | passive | Common anode of D1 and D2 in the BAS40-06 common-anode configuration. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23 |
| Category | Diodes |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Diode reverse voltage | VR | 40 | V | TA = 25 °C | 2 | ||
| Forward current | IF | 120 | mA | TA = 25 °C | 2 | ||
| Non-repetitive peak surge forward current | IFSM | 200 | t ≤ 10ms | 2 | |||
| Total power dissipation | Ptot | 250 | mW | BAS40-06, TS ≤ 56°C | 2 | ||
| Junction temperature | Tj | 150 | °C | 2 | |||
| Operating temperature range | Top | -55 | 150 | °C | 2 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 2 | ||
| Thermal resistance junction - soldering point | RthJS | 375 | K/W | BAS40-04, BAS40-06 | 2 | ||
| Breakdown voltage | V(BR) | 40 | V | I(BR) = 10 µA | 3 | ||
| Reverse current | IR | 1 | µA | VR = 30 V | 3 | ||
| Forward voltage | VF | 250 | 310 | 380 | mV | IF = 1 mA | 3 |
| Forward voltage | VF | 350 | 450 | 500 | mV | IF = 10 mA | 3 |
| Forward voltage | VF | 600 | 720 | 1000 | mV | IF = 40 mA | 3 |
| Forward voltage matching | ∆VF | 20 | IF = 10 mA | 3 | |||
| Diode capacitance | CT | 3 | 5 | pF | VR = 0 , f = 1 MHz | 3 | |
| Differential forward resistance | RF | 10 | Ω | IF = 10 mA, f = 10 kHz | 3 | ||
| Charge carrier life time | τrr | 100 | ps | IF = 25 mA | 3 |
CAD (KiCad official)
- Symbol:
BAS4006E6327 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bas4006e6327-etched.step/bas4006e6327-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bas4006e6327.step/bas4006e6327.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (15 pp, sha256
8cde61e18bbdc846, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).