component
WPM3021-8
Public Made by Adomby adom
WILLSEMI Will Semicon MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownWPM3021-8
WILLSEMI Will Semicon · MOSFETs · SOP-8
WPM3021-8 from WILLSEMI Will Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the single P-channel MOSFET; the datasheet gives the absolute maximum drain-source voltage as -30 V and gate-source voltage as ±25 V, and the continuous drain current as -13 A at TA=25°C. |
| 2 | S | passive | Source terminal of the single P-channel MOSFET; the datasheet gives the absolute maximum drain-source voltage as -30 V and gate-source voltage as ±25 V, and the continuous drain current as -13 A at TA=25°C. |
| 3 | S | passive | Source terminal of the single P-channel MOSFET; the datasheet gives the absolute maximum drain-source voltage as -30 V and gate-source voltage as ±25 V, and the continuous drain current as -13 A at TA=25°C. |
| 4 | G | input | Gate terminal of the MOSFET; gate-source voltage is rated at ±25 V maximum, and the gate threshold voltage is specified as -1.0 V min to -3.0 V max at ID=-250 µA. |
| 5 | D | passive | Drain terminal of the MOSFET; drain-source breakdown voltage is -30 V minimum at ID=-250 µA with VGS=0 V, and pulsed drain current is rated at -72 A. |
| 6 | D | passive | Drain terminal of the MOSFET; drain-source breakdown voltage is -30 V minimum at ID=-250 µA with VGS=0 V, and pulsed drain current is rated at -72 A. |
| 7 | D | passive | Drain terminal of the MOSFET; drain-source breakdown voltage is -30 V minimum at ID=-250 µA with VGS=0 V, and pulsed drain current is rated at -72 A. |
| 8 | D | passive | Drain terminal of the MOSFET; drain-source breakdown voltage is -30 V minimum at ID=-250 µA with VGS=0 V, and pulsed drain current is rated at -72 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WILLSEMI Will Semicon |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | BVDSS | -30 | V | VGS = 0 V, ID = -250uA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | uA | VDS = -24V, VGS = 0V | 3 | ||
| Gate-to-source Leakage Current | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±25V | 3 | |
| Gate Threshold Voltage | VGS(TH) | -1 | -1.8 | -3 | V | VGS = VDS, ID = -250uA | 3 |
| Drain-to-source On-resistance | RDS(on) | 11 | 15 | mΩ | VGS = -10V, ID = -13A | 3 | |
| Drain-to-source On-resistance | RDS(on) | 15 | 20 | mΩ | VGS = -5V, ID = -7A | 3 | |
| Forward Transconductance | gFS | 7 | 16 | S | VDS = -5 V, ID = -8A | 3 | |
| Forward Voltage | VSD | -0.5 | -0.8 | -1.2 | V | VGS = 0 V, IS = -1A | 3 |
| Drain-Source Voltage | VDS | -30 | V | 2 | |||
| Gate-Source Voltage | VGS | -25 | 25 | V | 2 | ||
| Continuous Drain Current | ID | -13 | A | TA=25°C | 2 | ||
| Continuous Drain Current | ID | -10 | A | TA=70°C | 2 | ||
| Pulsed Drain Current | IDM | -72 | A | Repetitive, ~10us pulse width, duty cycle ~1% (note c) | 2 | ||
| Maximum Power Dissipation | PD | 3.8 | W | TA=25°C | 2 | ||
| Maximum Power Dissipation | PD | 2.4 | W | TA=70°C | 2 | ||
| Operating Junction Temperature | TJ | -55 | 150 | °C | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 2 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 25 | 33 | °C/W | t ≤ 10 s, single operation | 2 | |
| Junction-to-Ambient Thermal Resistance | RθJA | 50 | 63 | °C/W | Steady state, single operation | 2 | |
| Junction-to-Lead Thermal Resistance | RθJL | 10 | 13 | °C/W | Steady state | 2 |
CAD (KiCad official)
- Symbol:
WPM3021-8 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
wpm3021-8-etched.step/wpm3021-8-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wpm3021-8.step/wpm3021-8.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WILLSEMI Will Semicon datasheet (8 pp, sha256
1730f9d37416cf66, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).