Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

CJQ4410

Changjiang Electronics Tech (CJ) · MOSFETs · SOP-8

CJQ4410 from Changjiang Electronics Tech (CJ), in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, with the drain-source voltage rated at 30 V and the continuous drain current at 7.5 A.
2 S passive Source of the N-channel MOSFET, with the drain-source voltage rated at 30 V and the continuous drain current at 7.5 A.
3 S passive Source of the N-channel MOSFET, with the drain-source voltage rated at 30 V and the continuous drain current at 7.5 A.
4 G input Gate of the N-channel MOSFET, with the gate-source voltage rated at ±20 V and the threshold voltage at 1.0 V min to 3.0 V max.
5 D passive Drain of the N-channel MOSFET, with the drain-source voltage rated at 30 V and the pulsed drain current at 50 A.
6 D passive Drain of the N-channel MOSFET, with the drain-source voltage rated at 30 V and the pulsed drain current at 50 A.
7 D passive Drain of the N-channel MOSFET, with the drain-source voltage rated at 30 V and the pulsed drain current at 50 A.
8 D passive Drain of the N-channel MOSFET, with the drain-source voltage rated at 30 V and the pulsed drain current at 50 A.

Key specifications

Parameter Value
Manufacturer Changjiang Electronics Tech (CJ)
Package SOP-8
Category Transistors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 7.5 A 1
Pulsed Drain Current IDM 50 A 1
Single Pulsed Avalanche Energy EAS 72 mJ VDD=50V, L=0.5mH, RG=25Ω, Starting TJ = 25°C 1
Power Dissipation PD 1.4 W 1
Thermal Resistance from Junction to Ambient RθJA 89 ℃/W 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature Range Tstg -55 150 ℃ 1
Lead Temperature for Soldering Purposes TL 260 ℃ 1/8'' from case for 10s 1
Drain-source breakdown voltage V(BR)DSS 30 V VGS = 0V, ID =250µA 2
Zero gate voltage drain current IDSS 1 µA VDS =30V, VGS =0V 2
Gate-body leakage current IGSS -100 100 nA VDS =0V, VGS =±20V 2
Gate-threshold voltage VGS(th) 1 1.3 3 V VDS =VGS, ID =250µA 2
Static drain-source on-state resistance RDS(on) 9 13.5 mΩ VGS =10V, ID =10A 2
Static drain-source on-state resistance RDS(on) 12 20 mΩ VGS =4.5V, ID =5A 2
Gate Resistance Rg 0.2 0.8 Ω f =1MHz, VDS=0V, VGS=0V 2
Drain-source diode forward voltage VSD 1.1 V VGS =0V, IS=2.3A 2
Continuous drain-source diode forward current IS 7.5 A 2
Pulsed drain-source diode forward current ISM 50 A 2

CAD (KiCad official)

  • Symbol: CJQ4410
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: cjq4410-etched.step / cjq4410-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cjq4410.step / cjq4410.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjiang Electronics Tech (CJ) datasheet (5 pp, sha256 ff3283b8dc62c1bf, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF