component
R6020ENX
Public Made by Adomby adom
ROHM Semicon MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownR6020ENX
ROHM Semicon · MOSFETs · TO-220F-3
R6020ENX from ROHM Semicon, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; static gate-source voltage limit is ±20V (±30V AC, f>1Hz), with threshold VGS(th) of 2V to 4V at VDS=10V, ID=1mA. |
| 2 | Drain | passive | Drain terminal; drain-source voltage rated 600V, continuous drain current ±20A and pulsed drain current ±60A. |
| 3 | Source | passive | Source terminal with the body diode to drain; continuous source current 20A and pulsed 60A at TC=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | TO-220F-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain - Source voltage | VDSS | 600 | V | 1 | |||
| Continuous drain current | ID | -20 | 20 | A | 1 | ||
| Pulsed drain current | IDP | -60 | 60 | A | Pw ≤ 10μs, Duty cycle ≤ 1% | 1 | |
| Gate - Source voltage (Static) | VGSS | -20 | 20 | V | Static | 1 | |
| Gate - Source voltage (AC) | VGSS | -30 | 30 | V | AC (f＞1Hz) | 1 | |
| Avalanche current, repetitive | IAS | 3.4 | A | 1 | |||
| Avalanche energy, single pulse | EAS | 418 | mJ | L≒70mH, VDD=50V, RG=25Ω, STARTING Tj=25℃ | 1 | ||
| Avalanche energy, repetitive | EAS | 0.63 | mJ | L≒70mH, VDD=50V, RG=25Ω, STARTING Tj=25℃ | 1 | ||
| Power dissipation | PD | 68 | W | Tc = 25°C | 1 | ||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Operating junction and storage temperature range | Tstg | -55 | 150 | ℃ | 1 | ||
| Reverse diode dv/dt | dv/dt | 15 | V/ns | 2 | |||
| Drain - Source voltage slope | dv/dt | 50 | V/ns | VDS = 480V, Tj = 25℃ | 2 | ||
| Thermal resistance, junction - case | RthJC | 1.8 | ℃/W | 2 | |||
| Thermal resistance, junction - ambient | RthJA | 70 | ℃/W | 2 | |||
| Soldering temperature, wavesoldering | Tsold | 265 | ℃ | for 10s | 2 | ||
| Drain - Source breakdown voltage | V(BR)DSS | 600 | V | VGS = 0V, ID = 1mA | 2 | ||
| Zero gate voltage drain current (Tj = 25°C) | IDSS | 0.1 | 100 | μA | VDS = 600V, VGS = 0V, Tj = 25°C | 2 | |
| Zero gate voltage drain current (Tj = 125°C) | IDSS | 1000 | μA | VDS = 600V, VGS = 0V, Tj = 125°C | 2 | ||
| Gate - Source leakage current | IGSS | -100 | 100 | nA | VGS = ±20V, VDS = 0V | 2 | |
| Gate threshold voltage | VGS(th) | 2 | 4 | V | VDS = 10V, ID = 1mA | 2 | |
| Static drain - source on-state resistance (Tj = 25°C) | RDS(on) | 0.17 | 0.196 | Ω | VGS = 10V, ID = 9.5A, Tj = 25°C | 2 | |
| Static drain - source on-state resistance (Tj = 125°C) | RDS(on) | 0.36 | Ω | VGS = 10V, ID = 9.5A, Tj = 125°C | 2 | ||
| Gate resistance | RG | 5.8 | Ω | f =1MHz, open drain | 2 | ||
| Forward transfer admittance | /Yfs/ | 5 | 10 | S | VDS = 10V, ID = 10A | 3 | |
| Input capacitance | Ciss | 1400 | pF | VGS = 0V | 3 | ||
| Output capacitance | Coss | 1200 | pF | VDS = 25V | 3 | ||
| Reverse transfer capacitance | Crss | 130 | pF | f = 1MHz | 3 | ||
| Effective output capacitance, energy related | Co(er) | 56 | pF | VGS = 0V | 3 | ||
| Effective output capacitance, time related | Co(tr) | 266 | pF | VDS = 0V to 480V | 3 | ||
| Turn - on delay time | td(on) | 35 | ns | VDD ⋍ 480V,VGS = 10V | 3 | ||
| Rise time | tr | 53 | ns | ID = 10A | 3 | ||
| Turn - off delay time | td(off) | 150 | ns | RL ⋍ 48Ω | 3 | ||
| Fall time | tf | 67 | ns | RG = 10Ω | 3 | ||
| Total gate charge | Qg | 60 | nC | VDD ⋍ 480V, ID = 20A, VGS = 10V | 3 | ||
| Gate - Source charge | Qgs | 8 | nC | 3 | |||
| Gate - Drain charge | Qgd | 33 | nC | 3 | |||
| Gate plateau voltage | V(plateau) | 6.9 | V | VDD = 480V, ID = 20A | 3 | ||
| Continuous forward current | IS | 20 | A | TC = 25℃ | 4 | ||
| Pulse forward current | ISP | 60 | A | Pw ≤ 10μs, Duty cycle ≤ 1% | 4 | ||
| Forward voltage | VSD | 1.5 | V | VGS = 0V, IS = 20A | 4 | ||
| Reverse recovery time | trr | 550 | ns | IS = 20A, di/dt = 100A/μs | 4 | ||
| Reverse recovery charge | Qrr | 10.4 | μC | 4 | |||
| Peak reverse recovery current | Irrm | 38 | A | 4 |
CAD (KiCad official)
- Symbol:
R6020ENX - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F-3 (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (15 pp, sha256
939796074531539c, retrieved 2026-10-30, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).