component
XR150N04T
Public Made by Adomby adom
XNRUSEMI MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownXR150N04T
XNRUSEMI · MOSFETs · TO-220AB
XR150N04T from XNRUSEMI, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage rating is ±20 V, with VGS(th) of 1.0 V min to 2.5 V max at ID=250uA. |
| 2 | D | passive | Drain (also the mounting tab); drain-source voltage rating 40 V, continuous drain current 150 A at TC=25℃. |
| 3 | S | passive | Source; continuous source current 150 A, body-diode forward voltage 1.2 V max at IS=1A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | XNRUSEMI |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 2.4 | 3.1 | mΩ | VGS=10V, ID=20A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.7 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=40V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 100 | uA | VDS=40V, VGS=0V, TJ=100℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | 150 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | 40 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 150 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 85 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 560 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 726 | mJ | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 115 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 1.3 | ℃/W | 1 | |||
| Forward Transconductance | gfs | 38 | S | VDS=5V, ID=20A | 2 | ||
| Gate Resistance | Rg | 0.67 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
XR150N04T - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
xr150n04t-etched.step/xr150n04t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);xr150n04t.step/xr150n04t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: XNRUSEMI datasheet (5 pp, sha256
3f5aa6506ba302ae, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).