component
PMV28UNEAR
Public Made by Adomby adom
Nexperia MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownPMV28UNEAR
Nexperia · MOSFETs · SOT-23
PMV28UNEAR from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; gate-source voltage is rated at -8 V to 8 V (Table 5, page 3). |
| 2 | S | passive | Source of the MOSFET; source current IS is rated at 1 A maximum at Tamb = 25 °C (Table 5, page 3). |
| 3 | D | passive | Drain of the MOSFET; drain-source voltage VDS is rated at 20 V maximum and continuous drain current ID at 4.7 A maximum with VGS = 4.5 V and Tamb = 25 °C (Table 5, page 3). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| drain-source voltage | VDS | 20 | V | 3 | |||
| gate-source voltage | VGS | -8 | 8 | V | Tj = 25 °C | 3 | |
| drain current | ID | 4.7 | A | VGS = 4.5 V; Tamb = 25 °C | 3 | ||
| drain current | ID | 2.9 | A | VGS = 4.5 V; Tamb = 100 °C | 3 | ||
| peak drain current | IDM | 19 | A | Tamb = 25 °C; single pulse; tp ≤ 10 µs | 3 | ||
| non-repetitive drain-source avalanche energy | EDS(AL)S | 3.3 | mJ | Tj(init) = 25 °C; ID = 0.33 A; DUT in avalanche (unclamped) | 3 | ||
| total power dissipation | Ptot | 510 | mW | Tamb = 25 °C [2] | 3 | ||
| total power dissipation | Ptot | 1.05 | W | [1] | 3 | ||
| total power dissipation | Ptot | 3.9 | W | Tsp = 25 °C | 3 | ||
| junction temperature | Tj | -55 | 150 | °C | 3 | ||
| ambient temperature | Tamb | -55 | 150 | °C | 3 | ||
| storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| source current | IS | 1 | A | Tamb = 25 °C [1] | 3 | ||
| electrostatic discharge voltage | VESD | 2000 | V | HBM [3] | 3 | ||
| thermal resistance from junction to ambient in free air | Rth(j-a) | 211 | 245 | K/W | [1] FR4 PCB, single-sided copper, tin-plated and standard footprint | 5 | |
| thermal resistance from junction to ambient in free air | Rth(j-a) | 102 | 120 | K/W | [2] FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2 | 5 | |
| thermal resistance from junction to solder point | Rth(j-sp) | 21 | 32 | K/W | 5 | ||
| drain-source breakdown voltage | V(BR)DSS | 20 | V | ID = 250 µA; VGS = 0 V; Tj = 25 °C | 6 | ||
| gate-source threshold voltage | VGSth | 0.45 | 0.7 | 1 | V | ID = 250 µA; VDS = VGS; Tj = 25 °C | 6 |
| drain leakage current | IDSS | 1 | µA | VDS = 20 V; VGS = 0 V; Tj = 25 °C | 6 | ||
| drain leakage current | IDSS | 10 | µA | VGS = 8 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| drain leakage current | IDSS | -10 | µA | VGS = -8 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| drain leakage current | IDSS | 5 | µA | VGS = 4.5 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| drain leakage current | IDSS | -5 | µA | VGS = -4.5 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| drain leakage current | IDSS | 100 | nA | VGS = 2.5 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| gate leakage current | IGSS | -100 | nA | VGS = -2.5 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| drain-source on-state resistance | RDSon | 24 | 32 | mΩ | VGS = 4.5 V; ID = 4.7 A; Tj = 25 °C | 6 | |
| drain-source on-state resistance | RDSon | 36 | 48 | mΩ | VGS = 4.5 V; ID = 4.7 A; Tj = 150 °C | 6 | |
| drain-source on-state resistance | RDSon | 29 | 45 | mΩ | VGS = 2.5 V; ID = 3.9 A; Tj = 25 °C | 6 | |
| drain-source on-state resistance | RDSon | 40 | 70 | mΩ | VGS = 1.8 V; ID = 3.1 A; Tj = 25 °C | 6 | |
| total gate charge | QG(tot) | 6.2 | 10 | nC | 6 | ||
| source-drain voltage | VSD | 0.6 | 1.2 | V | IS = 1 A; VGS = 0 V; Tj = 25 °C | 6 |
CAD (KiCad official)
- Symbol:
PMV28UNEAR - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
pmv28unear-etched.step/pmv28unear-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pmv28unear.step/pmv28unear.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (16 pp, sha256
6625632db1ca41e3, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).