VBE2406 from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate terminal; VGS is rated at ±20 V (absolute maximum) and VGS(th) is specified at 1.5 V to 2.5 V for ID = -250 µA.
2	D	passive	Drain terminal, electrically connected to the tab; rated VDS -40 V with continuous ID -90 A at TC = 25 °C.
3	S	passive	Source terminal; continuous source (diode) current IS is rated -100 A and pulsed drain current IDM is rated -280 A.

Key specifications

Parameter	Value
Manufacturer	VBsemi Elec
Package	TO-252
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDS			-40	V		1
Gate-Source Voltage	VGS	-20		20	V		1
Continuous Drain Current	ID			-90	A	TC = 25 °C	1
Continuous Drain Current	ID			-52	A	TC = 125 °C	1
Continuous Source Current (Diode Conduction)	IS			-100	A		1
Pulsed Drain Current	IDM			-280	A		1
Single Pulse Avalanche Current	IAS			-50	A	L = 0.1 mH	1
Single Pulse Avalanche Energy	EAS			125	mJ		1
Maximum Power Dissipation	PD			136	W	TC = 25 °C	1
Maximum Power Dissipation	PD			45	W	TC = 125 °C	1
Operating Junction and Storage Temperature Range	TJ, Tstg	-55		175	°C		1
Junction-to-Ambient Thermal Resistance	RthJA			50	°C/W	PCB mount	1
Junction-to-Case (Drain) Thermal Resistance	RthJC			1.1	°C/W		1
Drain-Source Breakdown Voltage	VDS	-40			V	VGS = 0 V, ID = - 250 μA	2
Gate-Source Threshold Voltage	VGS(th)	-1.5		-2.5	V	VDS = VGS, ID = - 250 μA	2
Gate-Source Leakage	IGSS	-100		100	nA	VDS = 0 V, VGS = ± 20 V	2
Zero Gate Voltage Drain Current	IDSS			1	μA	VGS = 0 V VDS = - 40 V	2
Zero Gate Voltage Drain Current	IDSS			50	μA	VGS = 0 V VDS = - 40 V, TJ = 125 °C	2
Zero Gate Voltage Drain Current	IDSS			150	μA	VGS = 0 V VDS = - 40 V, TJ = 175 °C	2
On-State Drain Current	ID(on)	-50			A	VGS = - 10 V VDS- 5 V	2
Drain-Source On-State Resistance	RDS(on)			0.0147	Ω	VGS = - 10 V, ID = - 50 A, TJ = 125 °C	2
Drain-Source On-State Resistance	RDS(on)			0.0178	Ω	VGS = - 10 V, ID = - 50 A, TJ = 175 °C	2
Input Capacitance	Ciss		5339	6675	pF	VGS = 0 V VDS = - 20 V, f = 1 MHz	2
Output Capacitance	Coss		852	1065	pF	VGS = 0 V VDS = - 20 V, f = 1 MHz	2
Reverse Transfer Capacitance	Crss		681	855	pF	VGS = 0 V VDS = - 20 V, f = 1 MHz	2
Total Gate Charge	Qg		103	155	nC	VGS = - 10 V VDS = - 20 V, ID = - 50 A	2
Gate Resistance	Rg	1.4	2.8	4.2	Ω	f = 1 MHz	2
Turn-On Delay Time	td(on)		13	20	ns	VDD = - 20 V, RL = 0.4 Ω, ID - 50 A, VGEN = - 10 V, Rg = 1 Ω	2
Rise Time	tr		15	23	ns	VDD = - 20 V, RL = 0.4 Ω, ID - 50 A, VGEN = - 10 V, Rg = 1 Ω	2
Turn-Off Delay Time	td(off)		61	92	ns	VDD = - 20 V, RL = 0.4 Ω, ID - 50 A, VGEN = - 10 V, Rg = 1 Ω	2
Fall Time	tf		19	29	ns	VDD = - 20 V, RL = 0.4 Ω, ID - 50 A, VGEN = - 10 V, Rg = 1 Ω	2
Pulsed Current	ISM			160	A		2
Forward Voltage	VSD		0.95	1.5	V	IF = - 50 A, VGS = 0 V	2

CAD (KiCad official)

Symbol: VBE2406
Footprint: Package_TO_SOT_SMD:TO-252-2
3D model: TO-252 (KiCad packages3D, STEP)
3D model files: vbe2406-etched.step / vbe2406-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vbe2406.step / vbe2406.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: VBsemi Elec datasheet (9 pp, sha256 547d4fad09f26e3d, retrieved 2026-11-02, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

VBE2406

Verified VBE2406

Verification log 1 record

3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

README