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Contents

README

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VS-MBRS130L-M3

Vishay Intertech · Schottky Barrier Diodes (SBD) · DO-214AA(SMB)

VS-MBRS130L-M3 from Vishay Intertech, in a DO-214AA(SMB). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode terminal, marked by the cathode band on the SMB (DO-214AA) package; the 30 V maximum DC reverse voltage VR is applied positive on this pin relative to the anode.
2 A passive Anode terminal of the single Schottky rectifier, carrying up to 1.0 A average forward current with 0.30 V typical forward drop at 1.0 A, TJ = 125 °C.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package DO-214AA(SMB)
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Maximum forward voltage drop VFM 0.42 V 1 A, TJ = 25 °C 2
Maximum forward voltage drop VFM 0.47 V 2 A, TJ = 25 °C 2
Maximum forward voltage drop VFM 0.3 V 1 A, TJ = 125 °C 2
Maximum forward voltage drop VFM 0.37 V 2 A, TJ = 125 °C 2
Maximum reverse leakage current IRM 1 mA TJ = 25 °C, VR = Rated VR 2
Maximum reverse leakage current IRM 10 mA TJ = 100 °C, VR = Rated VR 2
Maximum reverse leakage current IRM 20 mA TJ = 125 °C, VR = Rated VR 2
Maximum junction capacitance CT 200 pF VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 2
Maximum voltage rate of change dV/dt 10000 V/μs Rated VR 2
Maximum DC reverse voltage VR 30 V 1
Maximum average forward current IF(AV) 1 A 50 % duty cycle at TL = 112 °C, rectangular waveform 1
Maximum peak one cycle non-repetitive surge current IFSM 230 A 5 μs sine or 3 μs rect. pulse, following any rated load condition and with rated VRRM applied 1
Maximum peak one cycle non-repetitive surge current IFSM 40 A 10 ms sine or 6 ms rect. pulse, following any rated load condition and with rated VRRM applied 1
Non-repetitive avalanche energy EAS 3 mJ TJ = 25 °C, IAS = 1 A, L = 6 mH 1
Repetitive avalanche current IAR 1 A Current decaying linearly to zero in 1 μs, frequency limited by TJ maximum, VA = 1.5 x VR typical 1
Maximum junction temperature range TJ -55 125 °C 2
Maximum storage temperature range TStg -55 150 °C 2
Maximum thermal resistance, junction to lead RthJL 25 °C/W DC operation, see fig. 4 2
Maximum thermal resistance, junction to ambient RthJA 80 °C/W DC operation 2
Typical series inductance LS 2 nH Measured lead to lead 5 mm from package body 2

CAD (KiCad official)

  • Symbol: VS-MBRS130L-M3
  • Footprint: Diode_SMD:D_SMB
  • 3D model: DO-214AA(SMB) (KiCad packages3D, STEP)
  • 3D model files: vs-mbrs130l-m3-etched.step / vs-mbrs130l-m3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vs-mbrs130l-m3.step / vs-mbrs130l-m3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (6 pp, sha256 c11f9df1bd155958, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF