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BSC030P03NS3G-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBSC030P03NS3G-HXY
HXY MOSFET · MOSFETs · DFN5x6-8L
BSC030P03NS3G-HXY from HXY MOSFET, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET, rated for a drain-source voltage of -30 V (VDS) in the absolute maximum ratings. |
| 2 | S | passive | Source terminal of the P-channel MOSFET, rated for a drain-source voltage of -30 V (VDS) in the absolute maximum ratings. |
| 3 | S | passive | Source terminal of the P-channel MOSFET, rated for a drain-source voltage of -30 V (VDS) in the absolute maximum ratings. |
| 4 | G | input | Gate terminal of the P-channel MOSFET, with a gate-source voltage rating of ±20 V and RDS(ON) specified at VGS = -4.5 V (6.0 mΩ typ.). |
| 5 | D | passive | Drain terminal of the P-channel MOSFET; continuous drain current is -100 A at TC = 25℃ (VGS = -10 V), limited by package rating. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET; continuous drain current is -100 A at TC = 25℃ (VGS = -10 V), limited by package rating. |
| 7 | D | passive | Drain terminal of the P-channel MOSFET; continuous drain current is -100 A at TC = 25℃ (VGS = -10 V), limited by package rating. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET; continuous drain current is -100 A at TC = 25℃ (VGS = -10 V), limited by package rating. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN5x6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V , ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 4 | m | VGS=-10V , ID=-20A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 6 | m | VGS=-4.5V , ID=-15A | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1.2 | -2.5 | V | VGS=VDS , ID =-250uA | 2 | |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-24V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | -5 | uA | VDS=-24V , VGS=0V , TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Continuous Source Current | IS | -100 | A | VG=VD=0V , Force Current | 2 | ||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V , IS=-1A , TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | -100 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | -70 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | -250 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 80 | mJ | 1 | |||
| Avalanche Current | IAS | -70 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 120 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 50 | ℃/W | surface mounted on 1 inch2 FR-4 board with 2OZ copper (note 1) | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 1.6 | ℃/W | surface mounted on 1 inch2 FR-4 board with 2OZ copper (note 1) | 1 |
CAD (KiCad official)
- Symbol:
BSC030P03NS3G-HXY - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files:
bsc030p03ns3g-hxy-etched.step/bsc030p03ns3g-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bsc030p03ns3g-hxy.step/bsc030p03ns3g-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
f2ff4cfc190cf504, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).