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AP3003
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ALLPOWER ShenZhen Quan Li Semiconductor MOSFETs, SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAP3003
ALLPOWER ShenZhen Quan Li Semiconductor · MOSFETs · SOT-23-6
AP3003 from ALLPOWER ShenZhen Quan Li Semiconductor, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of the N-channel MOSFET (30V, ±12V VGS max, VGS(th) 0.4 to 1.5V). |
| 2 | S2 | passive | Source of the P-channel MOSFET (VDS -30V, ID -4.2A). |
| 3 | G2 | input | Gate of the P-channel MOSFET (±12V VGS max, VGS(th) -0.5 to -1.3V). |
| 4 | D2 | passive | Drain of the P-channel MOSFET (VDS -30V, ID -4.2A, pulsed IDM -16.8A). |
| 5 | S1 | passive | Source of the N-channel MOSFET (VDS 30V, ID 5.8A). |
| 6 | D1 | passive | Drain of the N-channel MOSFET (VDS 30V, ID 5.8A, pulsed IDM 23A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ALLPOWER ShenZhen Quan Li Semiconductor |
| Package | SOT-23-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Channel) | VDS | 30 | V | 1 | |||
| Drain-Source Voltage (P-Channel) | VDS | -30 | V | 1 | |||
| Gate-Source Voltage (N-Channel) | VGS | -12 | 12 | V | 1 | ||
| Gate-Source Voltage (P-Channel) | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current (N-Channel) | ID | 5.8 | A | Ta =25℃ | 1 | ||
| Continuous Drain Current (P-Channel) | ID | -4.2 | A | Ta =25℃ | 1 | ||
| Continuous Drain Current (N-Channel) | ID | 3.6 | A | Ta =100℃ | 1 | ||
| Continuous Drain Current (P-Channel) | ID | -2.6 | A | Ta =100℃ | 1 | ||
| Pulsed Drain Current (N-Channel) | IDM | 23 | A | 1 | |||
| Pulsed Drain Current (P-Channel) | IDM | -16.8 | A | 1 | |||
| Power Dissipation | PD | 1.7 | W | 1 | |||
| Thermal Resistance from Junction to Ambient | RθJA | 74 | ℃/W | 1 | |||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature | TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-source breakdown voltage (N-Channel) | V(BR)DSS | 30 | V | VGS = 0V, ID =250µA | 2 | ||
| Zero gate voltage drain current (N-Channel) | IDSS | 1 | µA | VDS =30V, VGS = 0V | 2 | ||
| Gate-body leakage current (N-Channel) | IGSS | -100 | 100 | nA | VGS =±12V,VDS = 0V | 2 | |
| Gate threshold voltage (N-Channel) | VGS(th) | 0.4 | 1 | 1.5 | V | VDS =VGS, ID =250µA | 2 |
| Drain-source on-resistance (N-Channel) | RDS(on) | 24 | 38 | mΩ | VGS =4.5V, ID =5A | 2 | |
| Drain-source on-resistance (N-Channel) | RDS(on) | 35 | 58 | mΩ | VGS =2.5V, ID =1A | 2 | |
| Diode Forward voltage (N-Channel) | VDS | 1.2 | V | VGS =0V, IS=5.8A | 2 | ||
| Diode Forward current (N-Channel) | IS | 5.8 | A | 2 | |||
| Drain-source breakdown voltage (P-Channel) | V(BR)DSS | -30 | V | VGS = 0V, ID =-250µA | 3 | ||
| Zero gate voltage drain current (P-Channel) | IDSS | -1 | µA | VDS =-30V, VGS = 0V | 3 | ||
| Gate-body leakage current (P-Channel) | IGSS | -100 | 100 | nA | VGS =±12V, VDS = 0V | 3 | |
| Gate threshold voltage (P-Channel) | VGS(th) | -0.5 | -0.9 | -1.3 | V | VDS =VGS, ID =-250µA | 3 |
| Drain-source on-resistance (P-Channel) | RDS(on) | 53 | 68 | mΩ | VGS =-4.5V, ID =-4A | 3 | |
| Drain-source on-resistance (P-Channel) | RDS(on) | 75 | 96 | mΩ | VGS =-2.5V, ID =-1A | 3 | |
| Diode Forward voltage (P-Channel) | VDS | 1.2 | V | VGS =0V, IS=-4.2A | 3 | ||
| Diode Forward current (P-Channel) | IS | -4.2 | A | 3 |
CAD (KiCad official)
- Symbol:
AP3003 - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files:
ap3003-etched.step/ap3003-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ap3003.step/ap3003.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ALLPOWER ShenZhen Quan Li Semiconductor datasheet (11 pp, sha256
afc3cb3f080cf3a4, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).