component
SSM3J327R
Public Made by Adomby adom
TOSHIBA MOSFETs, SOT-23F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSSM3J327R
TOSHIBA · MOSFETs · SOT-23F
SSM3J327R from TOSHIBA, in a SOT-23F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | MOSFET gate terminal; the gate-source voltage is rated at ±8 V (VGSS) in the absolute maximum ratings. |
| 2 | Source | passive | MOSFET source terminal; the datasheet gives no separate electrical limit for this pin beyond the device ratings. |
| 3 | Drain | passive | MOSFET drain terminal; the drain-source voltage is rated at -20 V (VDSS) and the DC drain current at -3.9 A (Note 3, FR4 board). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOT-23F |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-source voltage | VGSS | -8 | 8 | V | 2 | ||
| Drain-source voltage | VDSS | -20 | V | 2 | |||
| Drain current (DC) | ID | -3.9 | A | Note 3: device mounted on FR4 board | 2 | ||
| Drain current (pulsed) | IDP | -7.812 | A | Note 2: pulse width <=10 ms, duty <=1% | 2 | ||
| Channel temperature | Tch | 150 | °C | 2 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 2 | ||
| Gate leakage current | IGSS | -1 | 1 | µA | VDS = 0 V, VGS = ±8 V | 3 | |
| Drain cut-off current | IDSS | -1 | µA | VDS = -20 V, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | -20 | V | ID = -1 mA, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage (VGS applied) | V(BR)DSX | -15 | V | ID = -1 mA, VGS = 5 V | 3 | ||
| Gate threshold voltage | Vth | -0.3 | -1 | V | VDS = -3 V, ID = -1 mA | 3 | |
| Drain-source on-resistance | RDS(ON) | 78.5 | 93 | mΩ | ID = -1.5 A, VGS = -4.5 V | 3 | |
| Drain-source on-resistance | RDS(ON) | 97.5 | 123 | mΩ | ID = -1.0 A, VGS = -2.5 V | 3 | |
| Drain-source on-resistance | RDS(ON) | 120 | 168 | mΩ | ID = -0.5 A, VGS = -1.8 V | 3 | |
| Drain-source on-resistance | RDS(ON) | 141 | 240 | mΩ | ID = -0.25 A, VGS = -1.5 V | 3 | |
| Forward transfer admittance | /Yfs/ | 2.8 | 5.6 | S | VDS = -3 V, ID = -1.0 A | 3 | |
| Diode forward voltage | VDSF | 0.97 | 1.2 | V | ID = 3.9 A, VGS = 0 V | 4 |
CAD (KiCad official)
- Symbol:
SSM3J327R - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23F (KiCad packages3D, STEP)
- 3D model files:
ssm3j327r-etched.step/ssm3j327r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ssm3j327r.step/ssm3j327r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (9 pp, sha256
c00878e1e317eacb, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).