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Contents

README

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G1003B-23

GOFORD · MOSFETs · SOT-23-3L

G1003B-23 from GOFORD, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±25 V absolute maximum, threshold 1 to 3 V at 250 µA, and drives fully at gate voltages as low as 4.5 V.
2 S passive Source; continuous drain current 5 A at Tc=25℃, body diode source-drain current 12 A.
3 D passive Drain; drain-source voltage rated 100 V, continuous drain current 5 A at Tc=25℃ and 12 A pulsed.

Key specifications

Parameter Value
Manufacturer GOFORD
Package SOT-23-3L
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 100 μA VDS=100V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1 3 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 135 170 mΩ VGS=10V, ID=-10A 2
Drain-Source On-State Resistance RDS(ON) 145 180 mΩ VGS=4.5V, ID=-5A 2
Source-Drain Current (Body Diode) ISD 12 A 2
Drain-Source Voltage VDS 100 V VGS=0V, TA=25℃ 1
Gate-Source Voltage VGS -25 25 V VDS=0V, TA=25℃ 1
Drain Current-Continuous ID 5 A Tc=25℃ 1
Drain Current-Continuous ID 1.8 A Tc=100℃ 1
Drain Current-Pulsed IDM 12 A TA=25℃, pulse width limited by max junction temperature 1
Maximum Power Dissipation PD 3.3 W TA=25℃ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ TA=25℃ 1
Thermal Resistance, Junction-to-Ambient RJA 37 ℃/W 1
Input Capacitance Ciss 570 pF VDS=25V,VGS=0V,f=1.0MHz 2
Output Capacitance Coss 25 pF VDS=25V,VGS=0V,f=1.0MHz 2
Reverse Transfer Capacitance Crss 20 pF VDS=25V,VGS=0V,f=1.0MHz 2
Turn-on Delay Time td(on) 2.2 nS VDD=15V,ID=1A,RL=15Ω,VGS=10V,RG=2.5Ω 2
Turn-on Rise Time tr 3.9 nS VDD=15V,ID=1A,RL=15Ω,VGS=10V,RG=2.5Ω 2
Turn-Off Delay Time td(off) 5.8 nS VDD=15V,ID=1A,RL=15Ω,VGS=10V,RG=2.5Ω 2
Turn-Off Fall Time tf 1.9 nS VDD=15V,ID=1A,RL=15Ω,VGS=10V,RG=2.5Ω 2
Total Gate Charge Qg 30 nC VDS=15V,ID=10A,VGS=10V 2
Gate-Source Charge Qgs 6 nC VDS=15V,ID=10A,VGS=10V 2
Gate-Drain Charge Qgd 9 nC VDS=15V,ID=10A,VGS=10V 2
Forward on Voltage VSD 0.8 V VGS=0V,IS=2A 2

CAD (KiCad official)

  • Symbol: G1003B-23
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3L (KiCad packages3D, STEP)
  • 3D model files: g1003b-23-etched.step / g1003b-23-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); g1003b-23.step / g1003b-23.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOFORD datasheet (6 pp, sha256 a5fbf499ad5f1623, retrieved 2026-10-24, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF