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Contents

Pinout
Key specifications
Electrical characteristics
CAD (KiCad official)
Provenance

README

markdown

S-LMBT5551LT1G

LRC · Bipolar (BJT) · SOT-23

S-LMBT5551LT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	BASE	input	Base terminal of the NPN high-voltage transistor; the datasheet gives no pin-specific limit, and the device ratings apply (VCEO 160 V, VEBO 6 V, IC 600 mA continuous).
2	EMITTER	passive	Emitter terminal of the transistor; the datasheet gives no pin-specific limit, and the device ratings apply (VEBO 6 V, IC 600 mA continuous).
3	COLLECTOR	passive	Collector terminal of the transistor, rated for a collector-emitter voltage VCEO of 160 V and a continuous collector current IC of 600 mA.

Key specifications

Parameter	Value
Manufacturer	LRC
Package	SOT-23
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Max	Unit	Conditions	Page
Collector-Emitter Breakdown Voltage	V(BR)CEO	160		V	IC = 1.0 mA, IB = 0	2
Collector-Base Breakdown Voltage	V(BR)CBO	180		V	IC = 100 µA, IE = 0	2
Emitter-Base Breakdown Voltage	V(BR)EBO	6		V	IE = 10 µA, IC = 0	2
Collector Cutoff Current	ICBO		50	nA	VCB = 120 V, IE = 0	2
Collector Cutoff Current	ICBO		50	µA	VCB = 120 V, IE = 0, TA = 100°C	2
Emitter Cutoff Current	IEBO		50	nA	VEB = 4.0 V, IC = 0	2
Collector Emitter Cut-off Current	ICES		50	nA	VCB = 10 V	2
Collector Emitter Cut-off Current	ICES		100	nA	VCB = 75 V	2
DC Current Gain	HFE	80			IC = 1.0 mA, VCE = 5.0 V	2
DC Current Gain	HFE	80	250		IC = 10 mA, VCE = 5.0 V	2
DC Current Gain	HFE	30			IC = 50 mA, VCE = 5.0 V	2
Collector-Emitter Saturation Voltage	VCE(S)		0.15	V	IC = 10 mA, IB = 1.0 mA	2
Collector-Emitter Saturation Voltage	VCE(S)		0.2	V	IC = 50 mA, IB = 5.0 mA	2
Base-Emitter Saturation Voltage	VBE(S)		1	V	IC = 10 mA, IB = 1.0 mA	2
Collector-Emitter Voltage	VCEO		160	V	Ta = 25ºC	1
Collector-Base Voltage	VCBO		180	V	Ta = 25ºC	1
Emitter-Base Voltage	VEBO		6	V	Ta = 25ºC	1
Collector Current - Continuous	IC		600	mA	Ta = 25ºC	1
Total Device Dissipation, FR-5 Board	PD		225	mW	FR-5 board (Note 1), TA = 25ºC	1
Total Device Dissipation, Alumina Substrate	PD		300	mW	Alumina substrate (Note 2), TA = 25ºC	1
Junction and Storage Temperature	TJ,Tstg	-55	150	℃		1
Thermal Resistance, Junction-to-Ambient, FR-5 Board	RΘJA		556	℃/W	FR-5 board (Note 1)	1
Thermal Resistance, Junction-to-Ambient, Alumina Substrate	RΘJA		417	℃/W	Alumina substrate (Note 2)	1

CAD (KiCad official)

Symbol: S-LMBT5551LT1G
Footprint: Package_TO_SOT_SMD:SOT-23
3D model: SOT-23 (KiCad packages3D, STEP)
3D model files: s-lmbt5551lt1g-etched.step / s-lmbt5551lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); s-lmbt5551lt1g.step / s-lmbt5551lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: LRC datasheet (5 pp, sha256 17f3a9b4fc84898e, retrieved 2026-10-09, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF