Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

BC817-40W-7

Diodes Incorporated · Bipolar (BJT) · SOT-323

BC817-40W-7 from Diodes Incorporated, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; drives the device, with peak base current IBM limited to 200 mA and VEBO of 5 V.
2 E passive Emitter of the NPN transistor; Emitter-Base voltage VEBO is limited to 5 V.
3 C passive Collector of the NPN transistor; VCEO 45 V, VCBO 50 V, continuous IC 500 mA, peak ICM 1.0 A.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage BVCEO 45 V IC = 10mA 2
Emitter-Base Breakdown Voltage BVEBO 5 V IC = 100µA 2
Collector-Emitter Cutoff Current ICES 100 nA VCE = 45V 2
Collector-Emitter Cutoff Current (TJ = +150°C) ICES 5 µA VCE = 25V, TJ = +150°C 2
Collector-Base Cutoff Current ICBO 100 nA VCE = 20V 2
Collector-Base Cutoff Current (TJ = +150°C) ICBO 5 µA VCE = 20V, TJ = +150°C 2
Emitter-Base Cutoff Current IEBO 100 nA VEB = 5V 2
DC Current Gain (BC817-40W) hFE 250 600 IC = 100mA, VCE = 1.0V 2
DC Current Gain (BC817-40W) hFE 170 IC = 300mA, VCE = 1.0V 2
Collector-Emitter Saturation Voltage VCE(SAT) 700 mV IC = 500mA, IB = 50mA 2
Base-Emitter Voltage VBE 1200 mV IC = 300mA, VCE = 1.0V 2
Gain Bandwidth Product fT 100 MHz VCE = 5.0V, IC = 10mA, f = 50MHz 2
Collector-Base Capacitance CCBO 12 pF VCB = 10V, f = 1.0MHz 2
Collector-Base Voltage VCBO 50 V 2
Collector-Emitter Voltage VCEO 45 V 2
Emitter-Base Voltage VEBO 5 V 2
Continuous Collector Current IC 500 mA 2
Peak Collector Current ICM 1 A 2
Peak Base Current IBM 200 mA 2
Electrostatic Discharge - Human Body Model ESD HBM 4000 V JEDEC Class 3A (Note 6) 2
Electrostatic Discharge - Machine Model ESD MM 400 V JEDEC Class C (Note 6) 2
Power Dissipation PD 200 mW Note 5: minimum recommended pad layout, 1oz Cu, single-sided FR4, still air 2
Thermal Resistance, Junction to Ambient RθJA 625 °C/W Note 5: minimum recommended pad layout, 1oz Cu, single-sided FR4, still air 2
Operating and Storage Temperature Range TJ,TSTG -65 150 °C 2

CAD (KiCad official)

  • Symbol: BC817-40W-7
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: bc817-40w-7-etched.step / bc817-40w-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc817-40w-7.step / bc817-40w-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (5 pp, sha256 07d7e626d373c03f, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF