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MSD1819A-RT1G

Public Made by Adom

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onsemi Bipolar (BJT), SC-70-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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MSD1819A-RT1G

onsemi · Bipolar (BJT) · SC-70-3

MSD1819A-RT1G from onsemi, in a SC-70-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the NPN general-purpose amplifier transistor; device limits are VCBO 60 Vdc, VCEO 50 Vdc, VEBO 7.0 Vdc, continuous IC 100 mAdc and peak IC 200 mAdc.
2 EMITTER passive Emitter terminal of the NPN general-purpose amplifier transistor; the same device maximum ratings (VCBO 60 Vdc, VCEO 50 Vdc, VEBO 7.0 Vdc, IC 100 mAdc continuous) apply to this terminal pair.
3 COLLECTOR passive Collector terminal of the NPN general-purpose amplifier transistor; the device is rated for 100 mAdc continuous and 200 mAdc peak collector current with 150 mW power dissipation (footnoted to an FR-4 minimum footprint).

Key specifications

Parameter Value
Manufacturer onsemi
Package SC-70-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO 50 Vdc IC = 2.0 mAdc, IB = 0 2
Collector-Base Breakdown Voltage V(BR)CBO 60 Vdc IC = 10 Adc, IE = 0 2
Emitter-Base Breakdown Voltage V(BR)EBO 7 Vdc IE = 10 Adc, IE = 0 2
Collector-Base Cutoff Current ICBO 0.1 A VCB = 20 Vdc, IE = 0 2
Collector-Emitter Cutoff Current ICEO 0.1 A VCE = 10 Vdc, IB = 0 2
DC Current Gain hFE1 hFE1 210 340 VCE = 10 Vdc, IC = 2.0 mAdc 2
DC Current Gain hFE2 hFE2 90 VCE = 2.0 Vdc, IC = 100 mAdc 2
Collector-Emitter Saturation Voltage VCE(sat) 0.5 Vdc IC = 100 mAdc, IB = 10 mAdc 2
Collector-Base Voltage V(BR)CBO 60 Vdc TA = 25°C 1
Collector-Emitter Voltage V(BR)CEO 50 Vdc TA = 25°C 1
Emitter-Base Voltage V(BR)EBO 7 Vdc TA = 25°C 1
Collector Current - Continuous IC 100 mAdc TA = 25°C 1
Collector Current - Peak IC(P) 200 mAdc TA = 25°C 1
Power Dissipation PD 150 mW Note 1: FR-4 board, minimum recommended footprint 1
Junction Temperature TJ 150 °C 1
Storage Temperature Range Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance RJA 833 °C/W Printed as annotation in Figure 1 (Derating Curve); no other conditions printed 2

CAD (KiCad official)

  • Symbol: MSD1819A-RT1G
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SC-70-3 (KiCad packages3D, STEP)
  • 3D model files: msd1819a-rt1g-etched.step / msd1819a-rt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); msd1819a-rt1g.step / msd1819a-rt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (4 pp, sha256 03563fc3ca6c98b3, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF