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Contents

README

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HD2302

High Diode · MOSFETs · SOT-23

HD2302 from High Diode, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, with gate-source voltage limited to ±8 V and threshold VGS(th) of 0.65 V min, 0.95 V typ and 1.2 V max.
2 S passive Source of the N-channel MOSFET, with continuous source-drain diode current IS rated 0.6 A.
3 D passive Drain of the N-channel MOSFET, with VDS rated 20 V and continuous drain current ID of 2.1 A.

Key specifications

Parameter Value
Manufacturer High Diode
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 20 V VGS = 0V, ID = 10µA 2
Gate-threshold voltage VGS(th) 0.65 0.95 1.2 V VDS = VGS, ID = 50µA 2
Gate-body leakage IGSS -100 100 nA VDS = 0V, VGS = ±8V 2
Zero gate voltage drain current IDSS 1 µA VDS = 20V, VGS = 0V 2
Drain-source on-resistance rDS(on) 0.035 0.06 Ω VGS = 4.5V, ID = 3.6A 2
Drain-source on-resistance rDS(on) 0.045 0.115 Ω VGS = 2.5V, ID = 3.1A 2
Diode forward voltage VSD 0.76 1.2 V IS = 0.94A, VGS = 0V 2
Total gate charge Qg 4 10 nC VDS = 10V, VGS = 4.5V, ID = 3.6A 2
Turn-on delay time td(on) 7 15 ns VDD = 10V, RL = 5.5Ω, ID ≈ 3.6A, VGEN = 4.5V, Rg = 6Ω 2
Rise time tr 55 80 ns VDD = 10V, RL = 5.5Ω, ID ≈ 3.6A, VGEN = 4.5V, Rg = 6Ω 2
Turn-off delay time td(off) 16 60 ns VDD = 10V, RL = 5.5Ω, ID ≈ 3.6A, VGEN = 4.5V, Rg = 6Ω 2
Fall time tf 10 25 ns VDD = 10V, RL = 5.5Ω, ID ≈ 3.6A, VGEN = 4.5V, Rg = 6Ω 2
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -8 8 V 1
Continuous Drain Current ID 2.1 A 1
Continuous Source-Drain Current (Diode Conduction) IS 0.6 A 1
Power Dissipation PD 0.4 W 1
Operating Junction Temperature TJ 150 ℃ 1
Storage Temperature TSTG -55 150 ℃ 1
Thermal Resistance from Junction to Ambient RθJA 312.5 ℃/W t≤5s 1

CAD (KiCad official)

  • Symbol: HD2302
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: hd2302-etched.step / hd2302-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hd2302.step / hd2302.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: High Diode datasheet (5 pp, sha256 b34b106a2c55cd50, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF