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Contents

README

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NTTFS015N04C-MS

MSKSEMI · MOSFETs · DFN5x6-8L

NTTFS015N04C-MS from MSKSEMI, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET, pin 1 at the marked corner.
2 S passive Source terminal of the N-channel MOSFET.
3 S passive Source terminal of the N-channel MOSFET.
4 G input Gate terminal; VGS rated ±20V, with operation at gate voltages as low as 4.5V.
5 D passive Drain terminal; VDS rated 40V, ID 50A at TC=25℃.
6 D passive Drain terminal; VDS rated 40V, ID 50A at TC=25℃.
7 D passive Drain terminal; VDS rated 40V, ID 50A at TC=25℃.
8 D passive Drain terminal; VDS rated 40V, ID 50A at TC=25℃.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package DFN5x6-8L
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 40 V 2
Gate-Source Voltage VGS -20 20 V 2
Continuous Drain Current ID 50 A VGS @ 10V, TC=25℃ 2
Continuous Drain Current ID 38 A VGS @ 10V, TC=100℃ 2
Pulsed Drain Current IDM 160 A 2
Single Pulse Avalanche Energy EAS 30 mJ Tj=25℃, VDD=30V, VG=10V, L=0.5mH, Rg=25Ω 2
Storage Temperature Range TSTG -55 175 ℃ 2
Operating Junction Temperature Range TJ -55 175 ℃ 2
Thermal Resistance, Junction-to-Case RθJC 1.76 ℃/W Note 2 3
Drain-Source Breakdown Voltage V(BR)DSS 40 V VGS=0V, ID=250μA 3
Zero Gate Voltage Drain Current IDSS 1 μA VDS=40V, VGS=0V 3
Gate to Body Leakage Current IGSS -100 100 μA VDS=0V, VGS=±20V 3
Gate Threshold Voltage VGS(th) 1 1.6 2.5 V VDS=VGS, ID=250μA 3
Static Drain-Source on-Resistance RDS(on) 11 14 mΩ VGS=10V, ID=30A 3
Forward Transconductance gFS 30 S VDS=5V, ID=20A 3
Output Capacitance Coss 171 pF VDS=25V, VGS=0V, f=1.0MHz 3
Reverse Transfer Capacitance Crss 115 pF VDS=25V, VGS=0V, f=1.0MHz 3
Turn-on Delay Time td(on) 5 ns VDD=20V, ID=20A, RL=1Ω, VGS=10V, RGEN=3Ω 3
Turn-on Rise Time tr 24 ns VDD=20V, ID=20A, RL=1Ω, VGS=10V, RGEN=3Ω 3
Turn-off Delay Time td(off) 38 ns VDD=20V, ID=20A, RL=1Ω, VGS=10V, RGEN=3Ω 3
Turn-off Fall Time tf 12 ns VDD=20V, ID=20A, RL=1Ω, VGS=10V, RGEN=3Ω 3
Total Gate Charge Qg 24 nC VDS=30V, ID=30A, VGS=10V 3
Gate-Source Charge Qgs 5.9 nC VDS=30V, ID=30A, VGS=10V 3
Gate-Drain Charge Qgd 3.6 nC VDS=30V, ID=30A, VGS=10V 3
Drain Forward Current IS 48 A Note 2 3
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=30A 3
Reverse Recovery Time trr 9 ns TJ=25℃, IF=30A, di/dt=100A/μs 3
Reverse Recovery Charge Qrr 15 nC 3

CAD (KiCad official)

  • Symbol: NTTFS015N04C-MS
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8L (KiCad packages3D, STEP)
  • 3D model files: nttfs015n04c-ms-etched.step / nttfs015n04c-ms-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nttfs015n04c-ms.step / nttfs015n04c-ms.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (8 pp, sha256 abc2ae806b276a78, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF