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Contents

README

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KTD1304

BORN · Bipolar (BJT) · SOT-23

KTD1304 from BORN, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the NPN VHF/UHF transistor, with emitter-base breakdown V(BR)EBO of at least 3.0 Vdc and absolute maximum emitter-base voltage VEBO of 3.0 Vdc.
2 EMITTER passive Emitter terminal of the NPN transistor, rated to the absolute maximum emitter-base voltage VEBO of 3.0 Vdc.
3 COLLECTOR passive Collector terminal of the NPN transistor, rated to absolute maximum collector-emitter voltage VCEO of 25 Vdc and collector-base voltage VCBO of 30 Vdc.

Key specifications

Parameter Value
Manufacturer BORN
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO 25 Vdc IC = 1.0 mAdc, IB = 0 2
Collector-Base Breakdown Voltage V(BR)CBO 30 Vdc IC = 100 Adc, IE = 0 2
Emitter-Base Breakdown Voltage V(BR)EBO 3 Vdc IE = 10 Adc, IC = 0 2
Collector Cutoff Current ICBO 100 nAdc VCB = 25 Vdc, IE = 0 2
Collector Cutoff Current ICBO 100 uAdc VCB = 30 Vdc, IE = 0 2
Emitter Cutoff Current IEBO 100 nAdc VEB = 2.0 Vdc, IC = 0 2
Emitter Cutoff Current IEBO 10 uAdc VEB = 3.0 Vdc, IC = 0 2
DC Current Gain hFE 60 - IC = 4.0 mAdc, VCE = 10 Vdc 2
Collector-Emitter Saturation Voltage VCE(sat) 0.5 Vdc IC = 4.0 mAdc, IB = 0.4 mAdc 2
Base-Emitter On Voltage VBE 0.95 Vdc IC = 4.0 mAdc, VCE = 10 Vdc 2
Current Gain-Bandwidth Product fT 650 MHz VCE = 10 Vdc, IC = 4.0 mAdc, f = 100 MHz 2
Collector-Base Capacitance Ccb 0.7 pF VCB = 10 Vdc, IE = 0, f = 1.0 MHz 2
Collector-Base Feedback Capacitance Crb 0.65 pF VCB = 10 Vdc, IE = 0, f = 1.0 MHz 2
Collector Base Time Constant rb'Cc 9 ps IC = 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz 2
Collector-Emitter Voltage VCEO 25 Vdc 1
Collector-Base Voltage VCBO 30 Vdc 1
Emitter-Base Voltage VEBO 3 Vdc 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Total Device Dissipation, FR-5 Board PD 225 mW TA = 25°C 1
Derate above 25°C, FR-5 Board PD 1.8 mW/°C Derate above 25°C 1
Thermal Resistance, Junction to Ambient, FR-5 Board RθJA 556 °C/W 1
Total Device Dissipation, Alumina Substrate PD 300 mW TA = 25°C 1
Derate above 25°C, Alumina Substrate PD 2.4 mW/°C Derate above 25°C 1
Thermal Resistance, Junction to Ambient, Alumina Substrate RθJA 417 °C/W 1

CAD (KiCad official)

  • Symbol: KTD1304
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: ktd1304-etched.step / ktd1304-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ktd1304.step / ktd1304.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: BORN datasheet (5 pp, sha256 43f3f72f7aa4d7ff, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF