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SVF7N65CDTR

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Hangzhou Silan Microelectronics MOSFETs, TO-252-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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SVF7N65CDTR

Hangzhou Silan Microelectronics · MOSFETs · TO-252-2

SVF7N65CDTR from Hangzhou Silan Microelectronics, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the datasheet limits gate-source voltage to VGS ±30 V and gives a gate threshold VGS(th) of 2.0 V to 4.0 V.
2 D passive Drain terminal; the device is rated for VDS 650 V and drain current ID 7.0 A at TC=25°C (4.0 A at TC=100°C), with pulsed drain current IDM 28.0 A.
3 S passive Source terminal; the body diode (source-drain) is rated for source current IS 7.0 A, pulsed ISM 28.0 A, and forward voltage VSD of 1.4 V max at IS=7.0 A.

Key specifications

Parameter Value
Manufacturer Hangzhou Silan Microelectronics
Package TO-252-2
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage BVDSS 650 V VGS=0V, ID=250µA 2
Drain-source leakage current IDSS 1 µA VDS=650V, VGS=0V 2
Gate-source leakage current IGSS -100 100 nA VGS=±30V, VDS=0V 2
Gate threshold voltage VGS(th) 2 4 V VGS=VDS, ID=250µA 2
Static drain-source on-resistance RDS(on) 1.1 1.4 Ω VGS=10V, ID=3.5 2
Source current (body diode) IS 7 A MOS body diode P-N junction 3
Source pulse current (body diode) ISM 28 A 3
Source-drain diode forward voltage VSD 1.4 V IS=7.0A, VGS=0V 3
Drain-source voltage VDS 650 V 2
Gate-source voltage VGS -30 30 V 2
Drain current (continuous) ID 7 A TC=25°C 2
Drain current (continuous) ID 4 A TC=100°C 2
Drain pulse current IDM 28 A 2
Power dissipation (TO-252-2L column) PD 89 W TC=25°C 2
Single pulse avalanche energy EAS 435 mJ Note 1: L=30mH, IAS=5.0A, VDD=100V, RG=25Ω, TJ=25°C 2
Operating junction temperature range TJ -55 150 °C 2
Storage temperature range Tstg -55 150 °C 2
Thermal resistance, junction to case RθJC 1.4 °C/W 2
Thermal resistance, junction to ambient RθJA 62 °C/W 2

CAD (KiCad official)

  • Symbol: SVF7N65CDTR
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2 (KiCad packages3D, STEP)
  • 3D model files: svf7n65cdtr-etched.step / svf7n65cdtr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); svf7n65cdtr.step / svf7n65cdtr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Hangzhou Silan Microelectronics datasheet (9 pp, sha256 520e50df6cc7e88c, retrieved 2026-10-17, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF